Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contact

Yan Da-Wei; Wu Jing; Yan Xiao-Hong; Li Wei-Ran; Yu Dao-Xin; Cao Yan-Rong; Gu Xiao-Feng

doi:10.7498/aps.70.20201355

Search

x

Yan Da-Wei, Wu Jing, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Cao Yan-Rong, Gu Xiao-Feng. Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contactJ. Acta Physica Sinica, 2021, 70(7): 077201. DOI: 10.7498/aps.70.20201355

Citation:

Yan Da-Wei, Wu Jing, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Cao Yan-Rong, Gu Xiao-Feng. Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contactJ. Acta Physica Sinica, 2021, 70(7): 077201. DOI: 10.7498/aps.70.20201355

Citation:

Yan Da-Wei, Wu Jing, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Cao Yan-Rong, Gu Xiao-Feng. Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contactJ. Acta Physica Sinica, 2021, 70(7): 077201. DOI: 10.7498/aps.70.20201355