Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layer

Huang Xing-Jie; Xing Yan-Hui; Yu Guo-Hao; Song Liang; Huang Rong; Huang Zeng-Li; Han Jun; Zhang Bao-Shun; Fan Ya-Ming

doi:10.7498/aps.71.20212192

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Huang Xing-Jie, Xing Yan-Hui, Yu Guo-Hao, Song Liang, Huang Rong, Huang Zeng-Li, Han Jun, Zhang Bao-Shun, Fan Ya-Ming. Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layerJ. Acta Physica Sinica, 2022, 71(10): 108501. DOI: 10.7498/aps.71.20212192

Citation:

Huang Xing-Jie, Xing Yan-Hui, Yu Guo-Hao, Song Liang, Huang Rong, Huang Zeng-Li, Han Jun, Zhang Bao-Shun, Fan Ya-Ming. Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layerJ. Acta Physica Sinica, 2022, 71(10): 108501. DOI: 10.7498/aps.71.20212192

Citation:

Huang Xing-Jie, Xing Yan-Hui, Yu Guo-Hao, Song Liang, Huang Rong, Huang Zeng-Li, Han Jun, Zhang Bao-Shun, Fan Ya-Ming. Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layerJ. Acta Physica Sinica, 2022, 71(10): 108501. DOI: 10.7498/aps.71.20212192