Investigation of AlGaN/GaN Schottky barrier diodes on free-standing GaN substrate with low leakage current

Wu Peng; Zhang Tao; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.71.20220161

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Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Investigation of AlGaN/GaN Schottky barrier diodes on free-standing GaN substrate with low leakage currentJ. Acta Physica Sinica, 2022, 71(15): 158503. DOI: 10.7498/aps.71.20220161

Citation:

Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Investigation of AlGaN/GaN Schottky barrier diodes on free-standing GaN substrate with low leakage currentJ. Acta Physica Sinica, 2022, 71(15): 158503. DOI: 10.7498/aps.71.20220161

Citation:

Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Investigation of AlGaN/GaN Schottky barrier diodes on free-standing GaN substrate with low leakage currentJ. Acta Physica Sinica, 2022, 71(15): 158503. DOI: 10.7498/aps.71.20220161