Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

Wu Peng; Zhu Hong-Yu; Wu Jin-Xing; Zhang Tao; Zhang Jin-Cheng; Hao Yue

doi:10.7498/aps.72.20230709

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Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anodeJ. Acta Physica Sinica, 2023, 72(17): 178501. DOI: 10.7498/aps.72.20230709

Citation:

Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anodeJ. Acta Physica Sinica, 2023, 72(17): 178501. DOI: 10.7498/aps.72.20230709

Citation:

Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anodeJ. Acta Physica Sinica, 2023, 72(17): 178501. DOI: 10.7498/aps.72.20230709