Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga<sub>2</sub>O<sub>3</sub>-SiC-Ag multilayer structures

Hu Sheng-Run; Ji Xue-Qiang; Wang Jin-Jin; Yan Jie-Yun; Zhang Tian-Yue; Li Pei-Gang

doi:10.7498/aps.73.20231534

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Hu Sheng-Run, Ji Xue-Qiang, Wang Jin-Jin, Yan Jie-Yun, Zhang Tian-Yue, Li Pei-Gang. Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga2O3-SiC-Ag multilayer structuresJ. Acta Physica Sinica, 2024, 73(5): 054201. DOI: 10.7498/aps.73.20231534

Citation:

Hu Sheng-Run, Ji Xue-Qiang, Wang Jin-Jin, Yan Jie-Yun, Zhang Tian-Yue, Li Pei-Gang. Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga2O3-SiC-Ag multilayer structuresJ. Acta Physica Sinica, 2024, 73(5): 054201. DOI: 10.7498/aps.73.20231534

Citation:

Hu Sheng-Run, Ji Xue-Qiang, Wang Jin-Jin, Yan Jie-Yun, Zhang Tian-Yue, Li Pei-Gang. Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga2O3-SiC-Ag multilayer structuresJ. Acta Physica Sinica, 2024, 73(5): 054201. DOI: 10.7498/aps.73.20231534