Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor

Su Le; Wang Cai-Lin; Tan Zai-Chao; Luo Yin; Yang Wu-Hua; Zhang Chao

doi:10.7498/aps.73.20240144

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Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2024, 73(11): 118501. DOI: 10.7498/aps.73.20240144

Citation:

Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2024, 73(11): 118501. DOI: 10.7498/aps.73.20240144

Citation:

Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2024, 73(11): 118501. DOI: 10.7498/aps.73.20240144