AlGaAs photocathode with enhanced response at 532 nm

Wang Dong-Zhi; Zhang Yi-Jun; Li Shi-Man; Tong Ze-Hao; Tang Song; Shi Feng; Jiao Gang-Cheng; Cheng Hong-Chang; Fu Rong-Guo; Qian Yun-Sheng; Zeng Yu-Gang

doi:10.7498/aps.73.20240253

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Wang Dong-Zhi, Zhang Yi-Jun, Li Shi-Man, Tong Ze-Hao, Tang Song, Shi Feng, Jiao Gang-Cheng, Cheng Hong-Chang, Fu Rong-Guo, Qian Yun-Sheng, Zeng Yu-Gang. AlGaAs photocathode with enhanced response at 532 nmJ. Acta Physica Sinica, 2024, 73(11): 118503. DOI: 10.7498/aps.73.20240253

Citation:

Wang Dong-Zhi, Zhang Yi-Jun, Li Shi-Man, Tong Ze-Hao, Tang Song, Shi Feng, Jiao Gang-Cheng, Cheng Hong-Chang, Fu Rong-Guo, Qian Yun-Sheng, Zeng Yu-Gang. AlGaAs photocathode with enhanced response at 532 nmJ. Acta Physica Sinica, 2024, 73(11): 118503. DOI: 10.7498/aps.73.20240253

Citation:

Wang Dong-Zhi, Zhang Yi-Jun, Li Shi-Man, Tong Ze-Hao, Tang Song, Shi Feng, Jiao Gang-Cheng, Cheng Hong-Chang, Fu Rong-Guo, Qian Yun-Sheng, Zeng Yu-Gang. AlGaAs photocathode with enhanced response at 532 nmJ. Acta Physica Sinica, 2024, 73(11): 118503. DOI: 10.7498/aps.73.20240253