First principles study of high-performance sub-5-nm monolayer SnS field-effect transistors

Guo Ying; Pan Feng; Yao Bin-Bin; Meng Hao; Lü Jin

doi:10.7498/aps.73.20241004

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Guo Ying, Pan Feng, Yao Bin-Bin, Meng Hao, Lü Jin. First principles study of high-performance sub-5-nm monolayer SnS field-effect transistorsJ. Acta Physica Sinica, 2024, 73(20): 207304. DOI: 10.7498/aps.73.20241004

Citation:

Guo Ying, Pan Feng, Yao Bin-Bin, Meng Hao, Lü Jin. First principles study of high-performance sub-5-nm monolayer SnS field-effect transistorsJ. Acta Physica Sinica, 2024, 73(20): 207304. DOI: 10.7498/aps.73.20241004

Citation:

Guo Ying, Pan Feng, Yao Bin-Bin, Meng Hao, Lü Jin. First principles study of high-performance sub-5-nm monolayer SnS field-effect transistorsJ. Acta Physica Sinica, 2024, 73(20): 207304. DOI: 10.7498/aps.73.20241004