Proton single-event effects in high-speed polysilicon-emitter bipolar transistors

LI Pei; HAN Chengxiang; HE Zijie; DONG Zhiyong; HE Huan; HE Chaohui; WEI Jianan

doi:10.7498/aps.74.20250276

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LI Pei, HAN Chengxiang, HE Zijie, DONG Zhiyong, HE Huan, HE Chaohui, WEI Jianan. Proton single-event effects in high-speed polysilicon-emitter bipolar transistorsJ. Acta Physica Sinica, 2025, 74(14): 148501. DOI: 10.7498/aps.74.20250276

Citation:

LI Pei, HAN Chengxiang, HE Zijie, DONG Zhiyong, HE Huan, HE Chaohui, WEI Jianan. Proton single-event effects in high-speed polysilicon-emitter bipolar transistorsJ. Acta Physica Sinica, 2025, 74(14): 148501. DOI: 10.7498/aps.74.20250276

Citation:

LI Pei, HAN Chengxiang, HE Zijie, DONG Zhiyong, HE Huan, HE Chaohui, WEI Jianan. Proton single-event effects in high-speed polysilicon-emitter bipolar transistorsJ. Acta Physica Sinica, 2025, 74(14): 148501. DOI: 10.7498/aps.74.20250276