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中国物理学会期刊
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YAN Yeqiang, REN Xingang, XIAO Hui, XIA Zhaosheng, HUANG Zhixiang. Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodesJ. Acta Physica Sinica, 2026, 75(11): 110708. DOI: 10.7498/aps.75.20251551
Citation: YAN Yeqiang, REN Xingang, XIAO Hui, XIA Zhaosheng, HUANG Zhixiang. Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodesJ. Acta Physica Sinica, 2026, 75(11): 110708. DOI: 10.7498/aps.75.20251551
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Investigation of electro-thermal simulation and performance control in GaN Schottky barrier diodes

Acta Phys. Sin., 2026, 75(11): 110708.
DOI: 10.7498/aps.75.20251551
CSTR: 32037.14.aps.75.20251551
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