| [1] |
HE Xiaolong, CHEN Peng. Resistive switching characteristics of Cu/MgO/MoS2/Cu structure. Acta Physica Sinica,
2025, 74(2): 028501.
doi: 10.7498/aps.74.20241298
|
| [2] |
WU Jiangcheng, YIN Yuting, FANG Henan. Interlayer conductance of MoS2 moiré superlattices. Acta Physica Sinica,
2025, 74(16): 167302.
doi: 10.7498/aps.74.20250434
|
| [3] |
Peng Lan-Qin, Li Xiao-Yu, Xing Yun, Zhao Han, Deng Yan-Tao, Yu Ying-Hui. Adsorption configuration and assembly structure of vanadyl phthalocyanine molecule on copper oxide layer. Acta Physica Sinica,
2024, 73(12): 120704.
doi: 10.7498/aps.73.20240043
|
| [4] |
Zhu Jian-Yun, Liu Lu, Li Yu-Qiang, Xu Jing-Ping. Effect of annealing atmosphere on characteristics of MONOS with LaTiON or HfLaON as charge storage layer. Acta Physica Sinica,
2013, 62(3): 038501.
doi: 10.7498/aps.62.038501
|
| [5] |
Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng. Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structure. Acta Physica Sinica,
2013, 62(19): 197203.
doi: 10.7498/aps.62.197203
|
| [6] |
Zhang Lei, Ye Hui, Huangfu You-Rui, Liu Xu. Investigation of Ge quantum dots formation on SiO2 substratethrough annealing process. Acta Physica Sinica,
2011, 60(7): 076103.
doi: 10.7498/aps.60.076103
|
| [7] |
Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica,
2009, 58(6): 4090-4095.
doi: 10.7498/aps.58.4090
|
| [8] |
Ding Hong-Lin, Liu Kui, Wang Xiang, Fang Zhong-Hui, Huang Jian, Yu Lin-Wei, Li Wei, Huang Xin-Fan, Chen Kun-Ji. Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure. Acta Physica Sinica,
2008, 57(7): 4482-4486.
doi: 10.7498/aps.57.4482
|
| [9] |
Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu. The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica,
2008, 57(4): 2524-2528.
doi: 10.7498/aps.57.2524
|
| [10] |
Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju. The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress. Acta Physica Sinica,
2006, 55(11): 6118-6122.
doi: 10.7498/aps.55.6118
|
| [11] |
Zhu Jun, Zhang Xing-Yuan, Lu Hong-Bo. Effect of annealing and polarizing temperature on the trap level distribution in nylon 11 film electrets. Acta Physica Sinica,
2005, 54(7): 3414-3417.
doi: 10.7498/aps.54.3414
|
| [12] |
Wang Yan-Gang, Xu Ming-Zhen, Tan Chang-Hua, Duan Xiao-Rong. Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown. Acta Physica Sinica,
2005, 54(8): 3884-3888.
doi: 10.7498/aps.54.3884
|
| [13] |
Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi. Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica,
2004, 53(11): 3888-3894.
doi: 10.7498/aps.53.3888
|
| [14] |
Shen Feng, Xu Qing-Yu, Lu Zheng-Qi, Cai Jian-Wang, Lai Wu-Yan, Zhang Ze. . Acta Physica Sinica,
2002, 51(8): 1851-1855.
doi: 10.7498/aps.51.1851
|
| [15] |
Liu Hong-Xia, Zheng Xue-Feng, Hao Yao. . Acta Physica Sinica,
2002, 51(1): 163-166.
doi: 10.7498/aps.51.163
|
| [16] |
LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
doi: 10.7498/aps.50.1172
|
| [17] |
LIU HONG-XIA, HAO YUE. STUDY ON STRESS INDEUCED LEAKAGE CURRENT TRANSIENT CHARACTERISTICS IN THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(9): 1769-1773.
doi: 10.7498/aps.50.1769
|
| [18] |
LIU HONG-XIA, HAO YUE. STUDY ON PARAMETER CHARACTERIZATION OF THIN GATE OXIDE TDDB BREAKDOWN. Acta Physica Sinica,
2000, 49(6): 1163-1167.
doi: 10.7498/aps.49.1163
|
| [19] |
LOU ZHI-DONG, XU ZHENG, XU CHUN-XIANG, YU LEI, TENG FENG, XU XU-RONG. HIGH-FIELD ELECTRON TRANSPORT OF AMORPHOUS SiO2 AS ACCELERATING LAYER IN THE LAYERED OPTIMIZATION TFEL. Acta Physica Sinica,
1998, 47(1): 139-145.
doi: 10.7498/aps.47.139
|
| [20] |
YANG BING-LIANG, LIU BAI-YONG, Y. C. CHENG, H. WONG. STUDY ON HIGH-FIELD ELECTRON TRAPPING AND DETRAPPING PROPERTY IN THIN SiOx Ny FILMS. Acta Physica Sinica,
1991, 40(11): 1855-1861.
doi: 10.7498/aps.40.1855
|
下载:
