Porous silicon - calcium fluoride plasma waveguide with asymmetric Ag film and its sensitivity characteristics

Wang Fang; Chen Ya-Ke; Li Chuan-Qiang; Ma Tao; Lu Ying-Hui; Liu Heng; Jin Chan

doi:10.7498/aps.70.20210704

Abstract

In this paper, a porous silicon-calcium fluoride hybrid plasmonic waveguide (PS-CaF₂ HPW) with an asymmetric silver film is studied. The PS-CaF₂ HPW is composed of a PS strip waveguide deposited with asymmetric CaF₂ and Ag thin film layers on an SiO₂ substrate. In the mid-infrared (MIR) region, the mode characteristics and waveguide sensitivity of the mode in the PS-CaF₂ HPW are simulated by using the finite element method (FEM). The results show that there are two fundamental modes (PM 1 and PM 2) with different polarization states in the PS-CaF₂ HPW. The real part of the effective refractive index (Re(n_eff)), transmission loss (α), normalized effective mode field area (A), quality factor (FOM) and sensitivity (S_wg) for each of the PM 1 and the PM 2 are studied and optimized. Moreover, the effect of temperature on the performances of the PS-CaF₂ HPW is also analyzed. Firstly, the mode field distributions calculated by the FEM indicate that the mode field energy for each of the PM 1 and PM 2 in the PS-CaF₂ HPW is mostly restricted to the PS layer and CaF₂ layer. Comparing with conventional dielectric waveguides, the mode field energy of the PS-CaF₂ HPW is well confined in the PS layer and CaF₂ layer. The geometric parameters of the PS-CaF₂ HPW are optimized by changing the geometric parameters (W₁, W₂, and W₃). When W₁ = 1500 nm, W₂ = 300 nm, W₃ = 70 nm, and the operating wavelength is ~3.5 μm, α and FOM are 0.019 dB/μm and 1594.99 for the PM 1, and α and FOM are 0.016 dB/μm and 1335.54 for the PM 2, respectively. Secondly, the waveguide sensitivity of the PS-CaF₂ HPW is analyzed. The results show that the size of PS layer has a great influence on the waveguide sensitivity. The waveguide sensitivity decreases with the size of the PS layer increasing. In addition, the PS-CaF₂ HPW has good temperature resistance. Moreover, temperature has almost no effect on Re(n_eff), nor α nor A nor FOM nor S_wg in a temperature range from -40 K to 40 K. Finally, the fabrication tolerances of the PS-CaF₂ HPW are demonstrated, and the good properties are maintained in a size tolerance range from -10 nm to 10 nm. With the advantages in propagation property and loss reduction, the PS-CaF₂ HPW provides a feasible label-free biochemical sensing scheme and a method of polarization control devices.

Keywords:

Authors and contacts

1.
College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China
2.
Key Laboratory of Interfacial Physics Technology Project, Chinese Academy of Sciences, Shanghai 201800, China
3.
Key Laboratory Optoelectronic Sensing Integrated Application of Henan Province, Henan Normal University, Xinxiang 453007, China
4.
Academician Workstation of Electromagnetic Wave Engineering of Henan Province, Henan Normal University, Xinxiang 453007, China

Corresponding author: Ma Tao, matao@htu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 62075057), Key Laboratory of Interfacial Physics Technology Project, Chinese Academy of Sciences (Grant No. CASKL-IPT2003), Basic Research Project of Key Scientific Research Projects of Higher Education Institutions of Henan Province, China (Grant No. 19B510006), and the Ph. D. Program of Henan Normal University (HNU), China (Grant Nos. gd17167, 5101239170010)

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References

[1]	Oulton R F, Sorger V J, Genov D A, Pile D F P, Zhang X 2008 Nat. Photonics 2 496 Google Scholar
[2]	Burstein E, Chen W P, Chen Y J, Hartstein A 1974 J. Vac. Sci. Technol. 11 1004 Google Scholar
[3]	Garcia de Abajo F J, Saenz J J 2005 Phys. Rev. Lett. 95 233901 Google Scholar
[4]	Yang L K, Li P, Wang H C, Li Z P 2018 Chin. Phys. B. 27 094216 Google Scholar
[5]	Zhang H F, Cao D, Tao F, Yang X H, Wang Y, Yan X N, Bai L H 2010 Chin. Phys. B. 19 027301 Google Scholar
[6]	Gong P Q, Li X G, Zhou X, Zhang Y A, Chen N, Wang S K, Zhang S Q, Zhao Y 2021 Opt. Laser Technol. 139 106981 Google Scholar
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[8]	Kumari B, Barh A, Varshney R K, Pal B P 2016 Sens. Actuators, B 236 759 Google Scholar
[9]	Kumari B, Varshney R K, Pal B P 2018 Sens. Actuators, B 255 3409 Google Scholar
[10]	Mortensen N A, Bozhevolnyi S I, Alù A 2019 Nanophotonics 8 1315 Google Scholar
[11]	Nedeljkovic M, Stankovic S, Mitchell C J, Khokhar A Z, Reynolds S A, Thomson D J, Gardes F Y, Littlejohns C G, Reed G T, Mashanovich G Z 2014 IEEE Photonics Technol. Lett. 26 1352 Google Scholar
[12]	Shen L, Healy N, Mitchell C J, Penades J S, Nedeljkovic M, Mashanovich G Z, Peacock A C 2015 Opt. Lett. 40 268 Google Scholar
[13]	Cheng Z Z, Chen X, Wong C Y, Xu K, Tsang H K 2012 IEEE Photonics J. 4 1510 Google Scholar
[14]	Shankar R, Bulu I, Lončar M 2013 Appl. Phys. Lett. 102 051108 Google Scholar
[15]	El Shamy R S, Swillam M A, Khalil D A 2019 J. Lightwave Technol. 37 4394 Google Scholar
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[21]	Heo J H, Shin D H, Kim S, Jang M H, Lee M H, Seo S W, Choi S H, Im S H 2017 J. Chem. Eng. Jpn. 323 153 Google Scholar
[22]	Hwang K W, Park S H 2015 Mater. Res. Innovations 19 S8 Google Scholar
[23]	Chen F, Lv H, Pang Z, Zhang J, Hou Y, Gu Y, Yang H, Yang G 2019 IEEE Sens. J. 19 8441 Google Scholar
[24]	Olenych I B, Monastyrskii L S, Aksimentyeva O I, Orovcík L, Salamakha M Y 2019 Mol. Cryst. Liq. Cryst. 673 32 Google Scholar
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[27]	Chan K C, Tso C Y, Hussain A, Chao C Y H 2019 Appl. Therm. Eng. 161 114112 Google Scholar
[28]	Gan F L, Wang B D, Jin Z H, Xie L L, Dai Z D, Zhou T X, Jiang X 2021 Sci. Total. Environ. 768 144529 Google Scholar
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[30]	Palik E D 1985 Academic Press 39 1
[31]	Ciminelli C, Campanella C M, Dell’Olio F, Campanella C E, Armenise M N 2013 Prog. Quantum Electron. 37 51 Google Scholar

Cited By

图 1 非对称银膜的PS-CaF₂混合等离子体波导示意图　(a)三维图; (b)波导截面图

Figure 1. Schematic diagram of Ag film coated asymmetric PS-CaF₂ hybrid plasma waveguide: (a) 3D diagram; (b) cross-sectional view.

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图 2 W₁ (= H₁) = 1500 nm, W₂ (= H₂) = 300 nm和W₃ (= H₃) = 70时, 非对称银膜PS-CaF₂混合等离子体波导中不同模式的模场分布图　(a) PM 1; (b) PM 2; 波导中心沿x方向的电场分布图 (c) PM 1; (d) PM 2; W₁ (= H₁) = 1500 nm和W₂ (= H₂) = 300 nm时, 无银膜普通波导的模场分布图 (e) TM₀₁; (f) TE₀₁; 波导中心沿x方向的电场分布图 (g) TM₀₁, (h) TE₀₁

Figure 2. Mode field distributions of (a) PM 1 and (b) PM 2; electric field distribution along the x axis of (c) PM 1 and (d) PM 2; mode field distributions of (e) TM₀₁ and (f) TE₀₁; electric field distribution along the x axis of (g) TM₀₁ and (h) TE₀₁ when W₁ (= H₁) = 1500 nm, W₂ (= H₂) = 300 nm and W₃ (= H₃) = 70.

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图 3 PM 1和PM 2的Re(n_eff)和α随(a)W₁(= H₁), (b) W₂(= H₂) 和 (c) W₃(= H₃)变化的规律, W₁(= H₁), W₂(= H₂) 和W₃(= H₃)分别取1500 nm, 300 nm和70 nm

Figure 3. Re(n_eff) and α of the PM 1 and PM 2 with different: (a) W₁(= H₁) at W₂(= H₂) = 300 nm and W₃(= H₃) = 70 nm; (b) W₂(= H₂) at W₁(= H₁) = 1500 nm and W₃(= H₃) = 70 nm; (c) W₃(= H₃) at W₂(= H₂) = 300 nm and W₁(= H₁) = 1500 nm.

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图 4 PM 1和PM 2 的FOM 和A随(a)W₁(= H₁), (b) W₂(= H₂)和(c) W₃(= H₃)变化的规律, W₁(= H₁), W₂(= H₂) 和W₃(= H₃)分别取1500 nm, 300 nm和70 nm

Figure 4. FOM and A of the PM 1 and PM 2 with different: (a) W₁(= H₁) at W₂(= H₂) = 300 nm and W₃(= H₃) = 70 nm; (b) W₂(= H₂) at W₁(= H₁) = 1500 nm and W₃(= H₃) = 70 nm; (c) W₃(= H₃) at W₂(= H₂) = 300 nm and W₁(= H₁) = 1500 nm.

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图 5 在不同的n_c下, PM 1和PM 2的(a) Re(n_eff), (b) FOM和A的变化规律, W₁ (= H₁), W₂ (= H₂) 和W₃ (= H₃)分别取1500 nm, 300 nm和70 nm

Figure 5. (a) Re(n_eff) and (b) FOM and A of the PM 1 and PM 2 with different n_c as W₁ (= H₁) = 1500 nm, W₂ (= H₂) = 300 nm and W₃ (= H₃) = 70 nm.

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图 6 非对称PS-CaF₂混合等离子体波导的PM 1 和 PM 2 的S_wg 随(a) W₁ (= H₁), (b) W₂ (= H₂)和(c) W₃ (= H₃) 的变化规律, W₁ (= H₁), W₂ (= H₂) 和W₃ (= H₃)分别取1500 nm, 300 nm和70 nm; 无Ag膜波导的PM 1 和 PM 2 的S_wg 随(d) W₁ (= H₁)和 (e) W₂ (= H₂)的变化规律, W₁(= H₁)和W₂(= H₂)分别取1500 nm和300 nm

Figure 6. with an asymmetric Ag film of S_wg of the PM 1 and PM 2 in the PS-CaF₂HPW with an asymmetric Ag films with different: (a) W₁ (= H₁) at W₂ (= H₂) = 300 nm and W₃ (= H₃) = 70 nm; (b) W₂ (= H₂) at W₁ (= H₁) = 1500 nm and W₃ (= H₃) = 70 nm; (c) W₃ (= H₃) at W₂ (= H₂) = 300 nm and W₁ (= H₁) = 1500 nm. Without an asymmetric Ag film of S_wg of the PM 1 and PM 2 in the waveguide without an asymmetric Ag film of with different (d) W₁ (= H₁) at W₂ (= H₂) = 300 nm; (b) W₂ (= H₂) at W₁ (= H₁) = 1500 nm.

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图 7 W₁ (= H₁) = 1500 nm, W₂ (= H₂) = 300 nm和W₃ (= H₃) = 70 nm时, 在不同的ΔT下 (a) Re(n_eff), (b) α, (c) FOM和A的变化规律

Figure 7. (a) Re(n_eff), (b) α, (c) FOM and A with different ΔT as W₁ (= H₁) = 1500 nm, W₂ (= H₂) = 300 nm and W₃ (= H₃) = 70 nm

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图 8 制造流程　(a)在SiO2衬底上外延生长PS层; (b)电子束光刻使其成型; (c)涂上抗蚀剂; (d) 在PS上外延生长CaF₂层; (e) 倾斜沉积金属Ag层; (f)电子束光刻使其成型, 并清除抗蚀剂

Figure 8. (a) Grow PS on a SiO₂ substrate; (b) pattern the resist through E-beam lithography; (c) it is coated with a resist; (d) grow CaF₂ layers epitaxially on a PS layer; (e) oblique deposition of metal Ag; (f) electron beam lithography moulds it and removes the resist.

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图 9 不同的尺寸容差下, PM 1和PM 2 的FOM的变化 (ΔFOM)随(a) ΔW₁和ΔH, (b) ΔW₂和ΔH₂; (c) ΔW₃和ΔH₃的变化规律, W₁ (= H₁), W₂ (= H₂) 和W₃ (= H₃)分别取1500 nm, 300 nm和70 nm

Figure 9. The changes of FOM (ΔFOM) for the PM 1 and PM 2 with different dimensional tolerances: (a) ΔW₁ and ΔH₁ at W₂ (= H₂) = 300 nm and W₃ (= H₃) = 70 nm; (b) ΔW₂ and ΔH₂ at W₁ (= H₁) = 1500 nm and W₃ (= H₃) = 70 nm; (c) ΔW₃ and ΔH₃ at W₁ (= H₁) = 1500 nm and W₂ (= H₂) = 300 nm.

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图 11 不同的尺寸容差, PM 1和PM 2 的S_wg (ΔS_wg)随(a) ΔW₁和ΔH₁, (b) ΔW₂和ΔH₂, (c) ΔW₃和ΔH₃的变化规律. W₁(= H₁), W₂(= H₂) 和W₃(= H₃)分别取1500 nm, 300 nm和70 nm

Figure 11. The changes of S_wg (ΔS_wg) for the PM 1 and PM 2 with different dimensional tolerances: (a) ΔW₁ and ΔH₁ at W₂(= H₂) = 300 nm and W₃(= H₃) = 70 nm; (b) ΔW₂ and ΔH₂ at W₁(= H₁) = 1500 nm and W₃(= H₃) = 70 nm; (c) ΔW₃ and ΔH₃ at W₁(= H₁) = 1500 nm and W₂(= H₂) = 300 nm.

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图 10 在不同的尺寸容差下, PM 1和PM 2 的A 的变化(ΔA)随(a) ΔW₁和ΔH₁, (b) ΔW₂和ΔH₂, (c) ΔW₃和ΔH₃的变化规律. W₁(= H₁), W₂(= H₂) 和W₃(= H₃)分别取1500 nm, 300 nm和70 nm

Figure 10. The changes of A (ΔA) for the PM 1 and PM 2 with different dimensional tolerances: (a) ΔW₁ and ΔH₁ at W₂ (= H₂) = 300 nm and W₃ (= H₃) = 70 nm; (b) ΔW₂ and ΔH₂ at W₁ (= H₁) = 1500 nm and W₃ (= H₃) = 70 nm; and (c) ΔW₃ and ΔH₃ at W₁ (= H₁) = 1500 nm and W₂ (= H₂) = 300 nm.

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[1]	Oulton R F, Sorger V J, Genov D A, Pile D F P, Zhang X 2008 Nat. Photonics 2 496 Google Scholar
[2]	Burstein E, Chen W P, Chen Y J, Hartstein A 1974 J. Vac. Sci. Technol. 11 1004 Google Scholar
[3]	Garcia de Abajo F J, Saenz J J 2005 Phys. Rev. Lett. 95 233901 Google Scholar
[4]	Yang L K, Li P, Wang H C, Li Z P 2018 Chin. Phys. B. 27 094216 Google Scholar
[5]	Zhang H F, Cao D, Tao F, Yang X H, Wang Y, Yan X N, Bai L H 2010 Chin. Phys. B. 19 027301 Google Scholar
[6]	Gong P Q, Li X G, Zhou X, Zhang Y A, Chen N, Wang S K, Zhang S Q, Zhao Y 2021 Opt. Laser Technol. 139 106981 Google Scholar
[7]	Smith C L, Thilsted A H, Garcia-Ortiz C E, Radko I P, Marie R, Jeppesen C, Vannahme C, Bozhevolnyi S I, Kristensen A 2014 Nano Lett. 14 1659 Google Scholar
[8]	Kumari B, Barh A, Varshney R K, Pal B P 2016 Sens. Actuators, B 236 759 Google Scholar
[9]	Kumari B, Varshney R K, Pal B P 2018 Sens. Actuators, B 255 3409 Google Scholar
[10]	Mortensen N A, Bozhevolnyi S I, Alù A 2019 Nanophotonics 8 1315 Google Scholar
[11]	Nedeljkovic M, Stankovic S, Mitchell C J, Khokhar A Z, Reynolds S A, Thomson D J, Gardes F Y, Littlejohns C G, Reed G T, Mashanovich G Z 2014 IEEE Photonics Technol. Lett. 26 1352 Google Scholar
[12]	Shen L, Healy N, Mitchell C J, Penades J S, Nedeljkovic M, Mashanovich G Z, Peacock A C 2015 Opt. Lett. 40 268 Google Scholar
[13]	Cheng Z Z, Chen X, Wong C Y, Xu K, Tsang H K 2012 IEEE Photonics J. 4 1510 Google Scholar
[14]	Shankar R, Bulu I, Lončar M 2013 Appl. Phys. Lett. 102 051108 Google Scholar
[15]	El Shamy R S, Swillam M A, Khalil D A 2019 J. Lightwave Technol. 37 4394 Google Scholar
[16]	Alonso-Ramos C, Nedeljkovic M, Benedikovic D, Penades J S, Littlejohns C G, Khokhar A Z, Perez-Galacho D, Vivien L, Cheben P, Mashanovich G Z 2016 Opt. Lett. 41 4324 Google Scholar
[17]	Hassan K, Leroy F, Colas-des-Francs G, Weeber J C 2014 Opt. Lett. 39 697 Google Scholar
[18]	Dai D X, He S L 2009 Opt. Express 17 16646 Google Scholar
[19]	Mai W J, Wang Y L, Zhang Y Y, Cui L N, Yu L 2017 Chin. Phys. B. 34 024204 Google Scholar
[20]	王志斌, 尹少杰, 段晓宁, 邓玉萍, 董伟, 孔祥瑞 2020 中国激光 47 0313001 Google Scholar Wang Z B, Yin S J, Duan X N, Deng Y P, Dong W, Kong X R 2020 Chin. J. Las. 47 0313001 Google Scholar
[21]	Heo J H, Shin D H, Kim S, Jang M H, Lee M H, Seo S W, Choi S H, Im S H 2017 J. Chem. Eng. Jpn. 323 153 Google Scholar
[22]	Hwang K W, Park S H 2015 Mater. Res. Innovations 19 S8 Google Scholar
[23]	Chen F, Lv H, Pang Z, Zhang J, Hou Y, Gu Y, Yang H, Yang G 2019 IEEE Sens. J. 19 8441 Google Scholar
[24]	Olenych I B, Monastyrskii L S, Aksimentyeva O I, Orovcík L, Salamakha M Y 2019 Mol. Cryst. Liq. Cryst. 673 32 Google Scholar
[25]	孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 物理学报 60 057303 Google Scholar Sun P, Hu M, Liu B, Sun F Y, Xun L J 2011 Acta. Phys. Sin. 60 057303 Google Scholar
[26]	陈颖, 范卉青, 卢波 2014 物理学报 63 244207 Google Scholar Chen Y, Fan H Q, Lu B 2014 Acta. Phys. Sin. 63 244207 Google Scholar
[27]	Chan K C, Tso C Y, Hussain A, Chao C Y H 2019 Appl. Therm. Eng. 161 114112 Google Scholar
[28]	Gan F L, Wang B D, Jin Z H, Xie L L, Dai Z D, Zhou T X, Jiang X 2021 Sci. Total. Environ. 768 144529 Google Scholar
[29]	Girault P, Azuelos P, Lorrain N, Poffo L, Lemaitre J, Pirasteh P, Hardy I, Thual M, Guendouz M, Charrier J 2017 Opt. Mater. 72 596 Google Scholar
[30]	Palik E D 1985 Academic Press 39 1
[31]	Ciminelli C, Campanella C M, Dell’Olio F, Campanella C E, Armenise M N 2013 Prog. Quantum Electron. 37 51 Google Scholar

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Vol. 70, Issue 22 - 2021-11-20

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