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Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe2

Wei Lu-Jun Li Yang-Hui Pu Yong

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Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe2

Wei Lu-Jun, Li Yang-Hui, Pu Yong
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  • The Wely semimetal WTe2 exhibits significant spin-orbit coupling characteristics and can generate unconventional spin current with out-of-plane polarization, which has become a hotspot in recent years. Meanwhile, WTe2 also has high charge-spin conversion efficiency, allowing perpendicular magnetization to be switched deterministically without the assistance of an external magnetic field, which is critical for the high-density integration of low-power magnetic random-access memories. The purpose of this paper is to review the recent advances in the research on spin orbit torque in heterostructures composed of WTe2 and ferromagnetic layers, focusing on progress of research on the detection and magnetization switching in the spin orbit torque of heterojunctions composed of WTe2 prepared by different methods (e.g. mechanical exfoliation and chemical vapor deposition) and ferromagnetic layers such as conventional magnets (e.g, FeNi and CoFeB, etc.) and two-dimensional magnets (e.g. Fe3GeTe2, etc.). Finally, the prospect of related research is discussed.
      Corresponding author: Pu Yong, yongpu@njupt.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52001169, 61874060, U1932159, 61911530220) and the Introduction Talent Research Launch Fund of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY219164, NY217118).
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  • 图 1  WTe2晶体结构

    Figure 1.  Crystal structure of WTe2.

    图 2  (a) τS/τBτT/τB分别与WTe2厚度的关系; (b)单层和双层的WTe2/Py器件的二次谐波霍尔电压与外加磁场角度关系, τB的符号反转反映在发现峰值信号的不同角度上[32]

    Figure 2.  (a) Ratios of the τS/τB and τTB as a function of WTe2 thickness; (b) second-harmonic Hall data for a WTe2/Py device with a monolayer bilayer WTe2, as a function of the angle of the applied magnetic field. The sign reversal of τB is reflected in the different angles at which the peak signals are found[32].

    图 3  (a)电流沿WTe2 a轴诱导磁化翻转特性[42]; (b)在WTe2/Fe3GeTe2异质结中SOT诱导的无场磁化翻转[40]

    Figure 3.  (a) The current-induced magnetization switching behavior along the a axis of WTe2[42]; (b) SOT-induced field-free switching in WTe2/Fe3GeTe2 bilayers[40].

    表 1  实验研究工作中WTe2晶体的制备方法、铁磁层材料和WTe2/FM异质结的SOT的表征方法、测试温度和自旋霍尔电导率

    Table 1.  Preparation method of WTe2 crystal, FM material, measurement method, experimental temperature and spin Hall conductivity for SOT in WTe2/FM heterostructures.

    制备方法 铁磁层材料 表征方法 测试温度/K 自旋霍尔电导率
    $ / {10^3}~({\hbar /{2{{e}}}}) {(\Omega {\cdot} {\text{m}})^{ - 1}} $
    文献
    Exfoliation Py ST-FMR 300 σS = 8 ± 2
    σA = 9 ± 3
    σB = 3.6 ± 0.8
    [38]
    Py SHH/ST-FMR 300 σS, σT, σA, σB observed [32]
    Py ST-FMR/SHH 300 σS, σA, σB observed [45]
    Fe2.78GeTe2 AHE loop shift 150—190 σB observed [39]
    Fe3GeTe2 Current-driven MS 110—135 σB observed [40]
    Fe3GeTe2 AHE loop shift 120 σB observed [41]
    SrRuO3 AHE loop shift 40 σB observed [43]
    CoTb SHH 300 σS, σT observed [46]
    CVD FeNi ST-FMR 300 σOP = 1.76
    σIP = 7.36
    [47]
    CoFeB AHE loop shift/SHH 300 σOP = 2.05 ± 0.39
    σIP = 3.58 ± 0.12
    [42]
    注: σS, σT, σBσA分别表示面内类阻尼SOT、面内类场SOT、面外类阻尼SOT和面外类场SOT相关的自旋霍尔电导率; σOPσIP分别表示面外和面内自旋霍尔电导率; ST-FMR, SHH, AHE loop shift和Current-driven MS分别表示自旋力矩-铁磁共振、二次谐波测量技术、反常霍尔效应回线偏移和电流驱动的磁化开关测试测试方法; CVD表示化学气相沉积.
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Metrics
  • Abstract views:  2815
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  • Cited By: 0
Publishing process
  • Received Date:  21 November 2023
  • Accepted Date:  03 January 2024
  • Available Online:  06 January 2024
  • Published Online:  05 January 2024

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