Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe<sub>2</sub>

Wei Lu-Jun; Li Yang-Hui; Pu Yong

doi:10.7498/aps.73.20231836

Abstract

The Wely semimetal WTe₂ exhibits significant spin-orbit coupling characteristics and can generate unconventional spin current with out-of-plane polarization, which has become a hotspot in recent years. Meanwhile, WTe₂ also has high charge-spin conversion efficiency, allowing perpendicular magnetization to be switched deterministically without the assistance of an external magnetic field, which is critical for the high-density integration of low-power magnetic random-access memories. The purpose of this paper is to review the recent advances in the research on spin orbit torque in heterostructures composed of WTe₂ and ferromagnetic layers, focusing on progress of research on the detection and magnetization switching in the spin orbit torque of heterojunctions composed of WTe₂ prepared by different methods (e.g. mechanical exfoliation and chemical vapor deposition) and ferromagnetic layers such as conventional magnets (e.g, FeNi and CoFeB, etc.) and two-dimensional magnets (e.g. Fe₃GeTe₂, etc.). Finally, the prospect of related research is discussed.

Keywords:

Authors and contacts

School of Science & New Energy Technology Engineering Laboratory of Jiangsu Provence, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Corresponding author: Pu Yong, yongpu@njupt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52001169, 61874060, U1932159, 61911530220) and the Introduction Talent Research Launch Fund of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY219164, NY217118).

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References

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Cited By

图 1 WTe₂晶体结构

Figure 1. Crystal structure of WTe₂.

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图 2 (a) τ_S/τ_B和τ_T/τ_B分别与WTe₂厚度的关系; (b)单层和双层的WTe₂/Py器件的二次谐波霍尔电压与外加磁场角度关系, τ_B的符号反转反映在发现峰值信号的不同角度上^[32]

Figure 2. (a) Ratios of the τ_S/τ_B and τ_T/τ_B as a function of WTe₂ thickness; (b) second-harmonic Hall data for a WTe₂/Py device with a monolayer bilayer WTe₂, as a function of the angle of the applied magnetic field. The sign reversal of τ_B is reflected in the different angles at which the peak signals are found^[32].

DownLoad: Full-Size Img PowerPoint

图 3 (a)电流沿WTe₂ a轴诱导磁化翻转特性^[42]; (b)在WTe₂/Fe₃GeTe₂异质结中SOT诱导的无场磁化翻转^[40]

Figure 3. (a) The current-induced magnetization switching behavior along the a axis of WTe₂^[42]; (b) SOT-induced field-free switching in WTe₂/Fe₃GeTe₂ bilayers^[40].

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表 1 实验研究工作中WTe₂晶体的制备方法、铁磁层材料和WTe₂/FM异质结的SOT的表征方法、测试温度和自旋霍尔电导率

Table 1. Preparation method of WTe₂ crystal, FM material, measurement method, experimental temperature and spin Hall conductivity for SOT in WTe₂/FM heterostructures.

制备方法	铁磁层材料	表征方法	测试温度/K	自旋霍尔电导率 $ / {10^3}~({\hbar /{2{{e}}}}) {(\Omega {\cdot} {\text{m}})^{ - 1}} $	文献
Exfoliation	Py	ST-FMR	300	σ_S = 8 ± 2 σ_A = 9 ± 3 σ_B = 3.6 ± 0.8	[38]
	Py	SHH/ST-FMR	300	σ_S, σ_T, σ_A, σ_B observed	[32]
	Py	ST-FMR/SHH	300	σ_S, σ_A, σ_B observed	[45]
	Fe_2.78GeTe₂	AHE loop shift	150—190	σ_B observed	[39]
	Fe₃GeTe₂	Current-driven MS	110—135	σ_B observed	[40]
	Fe₃GeTe₂	AHE loop shift	120	σ_B observed	[41]
	SrRuO₃	AHE loop shift	40	σ_B observed	[43]
	CoTb	SHH	300	σ_S, σ_T observed	[46]
CVD	FeNi	ST-FMR	300	σ_OP = 1.76 σ_IP = 7.36	[47]
CVD	CoFeB	AHE loop shift/SHH	300	σ_OP = 2.05 ± 0.39 σ_IP = 3.58 ± 0.12	[42]
注: σ_S, σ_T, σ_B和σ_A分别表示面内类阻尼SOT、面内类场SOT、面外类阻尼SOT和面外类场SOT相关的自旋霍尔电导率; σ_OP和σ_IP分别表示面外和面内自旋霍尔电导率; ST-FMR, SHH, AHE loop shift和Current-driven MS分别表示自旋力矩-铁磁共振、二次谐波测量技术、反常霍尔效应回线偏移和电流驱动的磁化开关测试测试方法; CVD表示化学气相沉积.

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Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe₂

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Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe2

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Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe₂