Doping-induced defect-bound exciton luminescence: A first-principles study of luminescence in Te4+, Sb3+, and La3+ doped Cs2SnCl6

HU Chaojie; XIAO Wenbo; GUAN Yinglin; LI Yongbo; LI Jingbo

doi:10.7498/aps.75.20260073

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HU Chaojie, XIAO Wenbo, GUAN Yinglin, LI Yongbo, LI Jingbo. Doping-induced defect-bound exciton luminescence: A first-principles study of luminescence in Te4+, Sb3+, and La3+ doped Cs2SnCl6. Acta Physica Sinica, 2026, 75(14): 140710. DOI: 10.7498/aps.75.20260073

Citation:

HU Chaojie, XIAO Wenbo, GUAN Yinglin, LI Yongbo, LI Jingbo. Doping-induced defect-bound exciton luminescence: A first-principles study of luminescence in Te4+, Sb3+, and La3+ doped Cs2SnCl6. Acta Physica Sinica, 2026, 75(14): 140710. DOI: 10.7498/aps.75.20260073

Citation:

HU Chaojie, XIAO Wenbo, GUAN Yinglin, LI Yongbo, LI Jingbo. Doping-induced defect-bound exciton luminescence: A first-principles study of luminescence in Te4+, Sb3+, and La3+ doped Cs2SnCl6. Acta Physica Sinica, 2026, 75(14): 140710. DOI: 10.7498/aps.75.20260073