The carrier lifetimes of p-type and n-type InSb are measured by the stationary photo-conductive and photoelectromagnetic method in the temperature range 85-290°K. The carrier lifetimes of all intrinsic samples tend to the same value as the temperature increases toward the room temperature. It is 3×l0-8 sec at 290°K. From the absolute value and temperature dependence of the lifetime and the influence of the doping, it is concluded that the carrier lifetime in InSb around the room temperature is controlled by the band to band impact recombination.Below 200°K, the lifetimes of majority and minority carriers in p-type InSb are different in magnitude and temperature dependence. It can well be explained by assuming the existance of a set of electron traps at 0.11 eV below the conduction band in conjunction with a set of recombination centres at 0.05 eV above the valence band.
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