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STUDIES OF INTERFACE FORMATION OF Co/GaAs(100) AND THE MAGNETIC PROPERTY OF ULTRATHIN Co FILMS

XU PENG-SHOU XU FA-QIANG LU ER-DONG SUN YU-MING ZHANG XIN-YI ZHANG FA-PEI ZHU JING-SHENG LIANG REN-YOU

STUDIES OF INTERFACE FORMATION OF Co/GaAs(100) AND THE MAGNETIC PROPERTY OF ULTRATHIN Co FILMS

XU PENG-SHOU, XU FA-QIANG, LU ER-DONG, SUN YU-MING, ZHANG XIN-YI, ZHANG FA-PEI, ZHU JING-SHENG, LIANG REN-YOU
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  • Received Date:  21 August 1997
  • Published Online:  20 April 1998

STUDIES OF INTERFACE FORMATION OF Co/GaAs(100) AND THE MAGNETIC PROPERTY OF ULTRATHIN Co FILMS

  • 1. (1)中国科学技术大学合肥国家同步辐射实验室,合肥 230029; (2)中国科学技术大学合肥国家同步辐射实验室,合肥 230029;中国科学技术大学结构分析开放实验室,合肥 230026; (3)中国科学技术大学结构分析开放实验室,合肥 230026

Abstract: Synchrotron radiation photoemission and ferromagnetic resonace(FMR) measurement have been used to study the interface formation of Co/GaAs(100) as well as the magnetic property of ultrathin Co films.The results show strong interface disruption and reaction between overlayer and substrate at low Co coverage(~0.2nm),At the coverage of 1nm,a stable interface forms.The Ga atoms in bulk GaAs may exchange with Co atoms and diffuse into Co overlayer,while a certain amount of As reacts with Co atoms,forming stable Co-As bonding.These reaction products lie in the narrow region near the interface(0.3—0.4nm).The remanent part of As will segregates on the surface of Co overlayer.Based on a theoretical model,the interface structure and concentration profile are discussed in detail.The FMR result demontrates that the ultrathin Co film consists of good-quality crystals and has a chemical homogeneity.

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