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Alarge signalanalyticalmodelwithtemperatureconsideredfor4H SiCradiofrequencypowerMESFETI Vcharacteristicsisproposedbasedonthetheoryofsaturatedcarriervelocity,bymeansofwhichtheself heatingeffectistakenintoaccountsoastoanalyzethetemperatureperformanceofSiCpowerMESFET .Theheattransportbetweenthechannelandthesubstrateismodeledwithnon constanttemperatureT0 atthebottomof4H SiCsubstrateinordertofittherealactionsofdevices.Agoodagree mentbetweensimulationandmeasurementisobtained.
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