Mechanism of nodule growth in ion beam sputtering films

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Abstract
Zirconium singlelayer films were prepared by ion beam sputtering method. By using a novel designed substrate holder in preplanting seeds method, the growth process of the nodular defects in thin films was studied. With the help of high resolution optical microscopy and electron scanning microcopy, the phenomenon that the nodules nucleation exhibits fractal characters in their initial growth period was observed. By using the molecular dynamics theory and diffusion limited aggregation model of film growth, the fractal phenomenon of the nodule nucleation was well explained.

Keywords:
nodular defect /

zirconium films /

diffusion limited aggregation model
Authors and contacts
Zhang Dong-Ping²,

Qi Hong-Ji²,

Shao Jian-Da¹,

Fan Rui-Ying¹,

Fan Zheng-Xiu¹

(1)中国科学院上海光学精密机械研究所，上海201800; (2)中国科学院上海光学精密机械研究所，上海201800;中国科学院研究生院，北京100864
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