A new Schottky barrier structure of GaN-based ultraviolet photodetector

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Abstract
A new GaN-based ultraviolet photodetector with Schottky barrior structure is proposed. Comparied with the conventional i-GaN/n+-GaN structure，there is an additional thin n-AlGaN cap layer on the i-GaN in the new structure. The simulation result demonstrates that the new structure leads to an increased quantum efficiency in GaN photodetection，since the negative effect of surface states on the photodetector is reduced in the new structure. In addition，it is suggested that the performance of device with the new structure could be further improved by employing an even thinner AlGaN cap layer with higher carrier concentration.

Keywords:
GaN /

Schottky structure /

ultraviolet photodetector /

AlGaN
Authors and contacts
Zhou Mei²,

Zuo Shu-Hua²,

Zhao De-Gang¹

(1)中国科学院半导体研究所集成光电子学国家重点实验室，北京 100083; (2)中国农业大学理学院应用物理系，北京 100083
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