Films were deposited on Si substrates at different temperatures by RF magnetron sputtering and subsequently annealed in vacuum at 800℃. Well crystallized films were prepared successfully. The influences of substrate temperature on the structure, the componsition and the morphology of Zn2GeO4films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and atom force microscope. The results show that Zn2GeO4 films grow with (220) preferred orientation with the increase of substrate temperature above 400℃, and the substrate temperature between 500 and 600℃ is suitable for GeO2 crystalline growth. XPS spectra show that the films contain four chemical compositions of Zn2GeO4, GeO2, Ge and ZnO. Besides, with the increase of substrates temperature, the size of crystal grains increases, and the surface of films is smooth and continuous. The green emission consisting of two peaks centered at 530 and 550nm, which is attributed to luminescence centers of Ge2+ substituting Zn2+ at different sites.
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