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A physics-based model of insulated gate bipolar transistor (IGBT) with all free-carrier injection conditions in a base region is presented, from which the ambipolar transport equations (ATEs) in high-level injection and low-level injection are deduced separately. Moreover, the boundary conditions of ATE are determined. In a more compact solution a Fourier-series solution for the ATE is used in this paper. Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach. Physics-based IGBT model is used which is proved accurate.
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Keywords:
- insulated gate bipolar transistors /
- physics-based model /
- injection condition /
- ambipolar transport equation
[1] Fang J, Lin W, Zhou X D, Li Z J 2006 Acta Phys. Sin. 55 3360 (in Chinese)[方 健、 林 薇、 周贤达、 李肇基 2006 物理学报 55 3360]
[2] Hefner A R, Daniel M D 1994 IEEE Transactions on Power Electronics 9 532
[3] Yue Y, Liou J J, Batarseh I 1996 Solid-State Electronics 39 1277
[4] Leturcq P 1997 28th Annual IEEE Power Electronics Specialists Conference St Louis, MO, USA, 22—27 Jun, 1997 p1
[5] Lu L, Pytel S G, Santi E, Bryant A T, Hudgins J L, Palmer P R IEEE 40th Annual Conference on Industry Application (Hong Kong, China), 2—6 October, 2005 p2635
[6] Lu L Q, Chen Z Y, Bryant A T, Hudgins J L, Palmer P R, Santi E 2010 IEEE Transactions on Industry Applications 46 875
[7] Cotorogea Maria 2009 IEEE Transactions on Power Electronics 24 2821
[8] Deng Y, Zhao Z M, Yuan L Q, Hu S D, Wang X S 2010 Proceedings of the CSEE 30 1 (in Chinese)[邓 夷、 赵争鸣、 袁立强、 胡斯登、王雪松 2010 中国电机工程学报 30 1]
[9] Mao P, Xie S J, Xu Z G 2010 Proceedings of the CSEE 30 40 (in Chinese)[毛 鹏、 谢少军、 许泽刚 2010中国电机工程学报 30 40]
[10] Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992 (in Chinese)[郜锦侠、 张义门、 汤晓燕、 张玉明 2006 物理学报 55 2992]
[11] Leturcq P, Berraies M O, Massol J L 1996 27th Annual IEEE Power Electronics Specialists Conference Baveno, Italy, 23—27 Jun, 1996 p35
[12] Ammous A, Ammous K, Morel H, Allard B, Bergogne D, Sellami F, Chante J P 2000 IEEE Transactions on Power Electronics 15 778
[13] Wang L, Steve Yang 2010 Acta Phys. Sin. 59 572 (in Chinese)[王 磊、 杨华岳 2010 物理学报 59 572]
[14] Palmer P R, Santi E, Hudgins J L, Xiaosong Kang, Joyce J C, Poh Yoon Eng 2003 IEEE Transactions on Power Electronics 18 1220
[15] Igic P M, Mawby P A, Towers M S, Jamal W, Batcup S 2002 Microelectronics Reliability 42 1045
[16] Du Bin, Hudgins J L, Santi E, Bryant A T, Palmer P R, Mantooth H A 2010 IEEE Transactions on Power Electronics 25 237
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[1] Fang J, Lin W, Zhou X D, Li Z J 2006 Acta Phys. Sin. 55 3360 (in Chinese)[方 健、 林 薇、 周贤达、 李肇基 2006 物理学报 55 3360]
[2] Hefner A R, Daniel M D 1994 IEEE Transactions on Power Electronics 9 532
[3] Yue Y, Liou J J, Batarseh I 1996 Solid-State Electronics 39 1277
[4] Leturcq P 1997 28th Annual IEEE Power Electronics Specialists Conference St Louis, MO, USA, 22—27 Jun, 1997 p1
[5] Lu L, Pytel S G, Santi E, Bryant A T, Hudgins J L, Palmer P R IEEE 40th Annual Conference on Industry Application (Hong Kong, China), 2—6 October, 2005 p2635
[6] Lu L Q, Chen Z Y, Bryant A T, Hudgins J L, Palmer P R, Santi E 2010 IEEE Transactions on Industry Applications 46 875
[7] Cotorogea Maria 2009 IEEE Transactions on Power Electronics 24 2821
[8] Deng Y, Zhao Z M, Yuan L Q, Hu S D, Wang X S 2010 Proceedings of the CSEE 30 1 (in Chinese)[邓 夷、 赵争鸣、 袁立强、 胡斯登、王雪松 2010 中国电机工程学报 30 1]
[9] Mao P, Xie S J, Xu Z G 2010 Proceedings of the CSEE 30 40 (in Chinese)[毛 鹏、 谢少军、 许泽刚 2010中国电机工程学报 30 40]
[10] Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992 (in Chinese)[郜锦侠、 张义门、 汤晓燕、 张玉明 2006 物理学报 55 2992]
[11] Leturcq P, Berraies M O, Massol J L 1996 27th Annual IEEE Power Electronics Specialists Conference Baveno, Italy, 23—27 Jun, 1996 p35
[12] Ammous A, Ammous K, Morel H, Allard B, Bergogne D, Sellami F, Chante J P 2000 IEEE Transactions on Power Electronics 15 778
[13] Wang L, Steve Yang 2010 Acta Phys. Sin. 59 572 (in Chinese)[王 磊、 杨华岳 2010 物理学报 59 572]
[14] Palmer P R, Santi E, Hudgins J L, Xiaosong Kang, Joyce J C, Poh Yoon Eng 2003 IEEE Transactions on Power Electronics 18 1220
[15] Igic P M, Mawby P A, Towers M S, Jamal W, Batcup S 2002 Microelectronics Reliability 42 1045
[16] Du Bin, Hudgins J L, Santi E, Bryant A T, Palmer P R, Mantooth H A 2010 IEEE Transactions on Power Electronics 25 237
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