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Thermal stability of Si-doped glow discharge polymer films

Zhang Ying He Zhi-Bing Li Ping Yan Jian-Cheng

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Thermal stability of Si-doped glow discharge polymer films

Zhang Ying, He Zhi-Bing, Li Ping, Yan Jian-Cheng
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  • The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different tetramethylsilane (TMS) flows. The chemical structure, the composition and the thermal stabilities of Si-GDP films are analyzed by the Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and thermal gravimetric analysis. The results show that the Si content increases from 0 to 16.62%, when the flow of TMS changes from 0 to 0.06 cm3/min. The relative content of SiC, SiH, SiO, SiCH3 increases with TMS flow rate increaseing. As TMS flow increases, the thermal stability of Si-GDP film becomes good.
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    Hoppe M L, Steinman Sr, Steinman D A 2007 General Atomics Report (San Diego: General Atomics) GA-A25664

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    Ray S C, Bao C W, Tsai H M, Chiou J W, Jan J C 2004 Appl. Phys. Lett. 85 4022

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    Anma H, Toki J, Ikeda T, Hatanaka Y 2000 Vacuum 59 665

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    Wu W J, Hon M H 1999 Surf. Coat. Technol. 111 134

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    Katayama Y, Usami K, Shimada T 1981 Philos. Mag. B 43 283

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    Demichelis F, Crovini G, Pirri C F, Tresso E 1993 Philos. Mag. B 68 329

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    Liu B, Tang W J, Song Z X, Chen Y S, Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 物理学报 58 2042]

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    Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 物理学报 58 6436]

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    Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才、任 妮、马占吉、邱家稳、肖更竭、武生虎 2008 物理学报 57 1935]

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  • [1]

    Nikroo A, Steinman D A 1999 Fusion Technol. 35 212

    [2]

    Hoppe M L 2000 Fusion Technol. 38 42

    [3]
    [4]
    [5]

    Hoppe M L 2000 General Atomics Report (San Diego: General Atomics) GA-A23356

    [6]
    [7]

    Hoppe M L, Steinman Sr, Steinman D A 2007 General Atomics Report (San Diego: General Atomics) GA-A25664

    [8]
    [9]

    Ray S C, Bao C W, Tsai H M, Chiou J W, Jan J C 2004 Appl. Phys. Lett. 85 4022

    [10]

    Demichelis F, Pirri C F, Tresso E, Stapinski T 1992 J. Appl. Phys. 71 5641

    [11]
    [12]
    [13]

    Anma H, Toki J, Ikeda T, Hatanaka Y 2000 Vacuum 59 665

    [14]
    [15]

    Wu W J, Hon M H 1999 Surf. Coat. Technol. 111 134

    [16]
    [17]

    Katayama Y, Usami K, Shimada T 1981 Philos. Mag. B 43 283

    [18]

    Demichelis F, Crovini G, Pirri C F, Tresso E 1993 Philos. Mag. B 68 329

    [19]
    [20]
    [21]

    Liu B, Tang W J, Song Z X, Chen Y S, Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 物理学报 58 2042]

    [22]

    Bounouh Y, Thye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597

    [23]
    [24]

    Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 物理学报 58 6436]

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    [26]
    [27]

    Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221

    [28]

    Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才、任 妮、马占吉、邱家稳、肖更竭、武生虎 2008 物理学报 57 1935]

    [29]
  • [1] Chen Jin-Feng, Zhu Lin-Fan. Electron collision cross section data in plasma etching modeling. Acta Physica Sinica, 2024, 73(9): 095201. doi: 10.7498/aps.73.20231598
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  • Abstract views:  6527
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Publishing process
  • Received Date:  25 December 2010
  • Accepted Date:  18 July 2011
  • Published Online:  05 June 2011

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