Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition

Zhou Xin-Jie; Li Lei-Lei; Zhou Yi; Luo Jing; Yu Zong-Guang

doi:10.7498/aps.61.206102

Abstract

According to the partially depleted SOI/MOS device's band gap, starting with the electric field, which is a factor of back-gate charge stack, we combine SOI device capacitance model and flat capacitance model for finding the way to keep electric field at the interface of Si/SiO2, and build a back-gate bias model. For validating the new model, we use alloy-agglomeration at the back gate. After radiation experiments, we compare the results of back-gate effect on NMOS with those on PMOS. It is concluded that as far as NMOS is concerned, negative voltage at back-gate can eliminate the back-gate effect which influence the performance of device, and improves the performance of front-gate. However negative voltage at back-gate makes the performance of PMOS worse. Therefore, when we use the back-gate bias to improve the performance of device, we must consider the performances of NMOS and PMOS and compromise the choice of the voltage which is applied to the back-gate. This research supplies not only a design scheme for hardening back-gate effect of SOI devices under radiation condition, but also a support in theory for integrated circuit design and manufacture, which is used in space.

Keywords:

Authors and contacts

1.
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
2.
No.58^th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China
Funds: Project supposed by the Foundation of SOI Research Center, China (Grant No. 20106250XXX), the High Reliability of Space Research Program, China (Grant No. XXX7116X), and the "333" Scientific Research Items of Jiangsu Province, China (Grant No. BRA2011115).

References

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[2]	Zheng Z S, Liu Z L, Zhang G Q, Li N, Fan K, Zhang E X, Yi W B, Chen M, Wang X 2005 Acta Phys. Sin. 54 348 (in Chinese) [郑中山, 刘忠立, 张国强, 李宁, 范楷, 张恩霞, 易万兵, 陈猛, 王曦 2005 物理学报 54 348]
[3]	Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 物理学报 60 098502]
[4]	Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李劲, 刘红侠, 李斌, 曹磊, 袁博 2010 物理学报 59 8131]
[5]	Barnaby H J, Mclain M L, Esqueda I S 2008 Proceedings of the 2008 IEEE Custom Integrated Circuits Conference San Jose, USA, September 21-24, 2008 p273
[6]	Wu W M, Yao W, Gildenblat G 2008 IEEE Trans. Elec. Dev. 55 3295
[7]	Schwank J R, Shaneyfelt M R, Dodd P E 2000 IEEE Trans. Nucl. Sci. 47 2175
[8]	Ferlet-Cavrois V, Colladant T, Paillet P 2000 IEEE Trans. Nucl. Sci. 45 1817
[9]	Mrstik B J, Hughes H L, McMarr P J 2000 IEEE Trans. Nucl. Sci. 47 2189
[10]	Schwank J R, Shaneyfelt M R, Fleetwood D M 2008 IEEE Trans. Nucl. Sci. 55 1833
[11]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R 2003 IEEE Trans. Nucl. Sci. 50 522
[12]	Ceschia M, Paccagnella A, Cester A 1998 IEEE Trans. Nucl. Sci. 45 2375
[13]	Shaneyfelt M R, Schwank J R, Fleetwood D M 1990 IEEE Trans. Nucl. Sci. 37 632
[14]	Schwank J R, Winokur P S, Sexton F W 1986 IEEE Trans. Nucl. Sci. 33 1178
[15]	Liu S T, Balster S, Sinha S 1999 IEEE Trans. Nucl. Sci. 46 1817

Cited By

[1]	Zheng Z S, Zhang E X, Liu Z L, Zhang Z X, Li N, Li G H 2007 Acta Phys. Sin. 56 5446 (in Chinese) [郑中山, 张恩霞, 刘忠立, 张正选, 李宁, 李国花 2007 物理学报 56 5446]
[2]	Zheng Z S, Liu Z L, Zhang G Q, Li N, Fan K, Zhang E X, Yi W B, Chen M, Wang X 2005 Acta Phys. Sin. 54 348 (in Chinese) [郑中山, 刘忠立, 张国强, 李宁, 范楷, 张恩霞, 易万兵, 陈猛, 王曦 2005 物理学报 54 348]
[3]	Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 物理学报 60 098502]
[4]	Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李劲, 刘红侠, 李斌, 曹磊, 袁博 2010 物理学报 59 8131]
[5]	Barnaby H J, Mclain M L, Esqueda I S 2008 Proceedings of the 2008 IEEE Custom Integrated Circuits Conference San Jose, USA, September 21-24, 2008 p273
[6]	Wu W M, Yao W, Gildenblat G 2008 IEEE Trans. Elec. Dev. 55 3295
[7]	Schwank J R, Shaneyfelt M R, Dodd P E 2000 IEEE Trans. Nucl. Sci. 47 2175
[8]	Ferlet-Cavrois V, Colladant T, Paillet P 2000 IEEE Trans. Nucl. Sci. 45 1817
[9]	Mrstik B J, Hughes H L, McMarr P J 2000 IEEE Trans. Nucl. Sci. 47 2189
[10]	Schwank J R, Shaneyfelt M R, Fleetwood D M 2008 IEEE Trans. Nucl. Sci. 55 1833
[11]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R 2003 IEEE Trans. Nucl. Sci. 50 522
[12]	Ceschia M, Paccagnella A, Cester A 1998 IEEE Trans. Nucl. Sci. 45 2375
[13]	Shaneyfelt M R, Schwank J R, Fleetwood D M 1990 IEEE Trans. Nucl. Sci. 37 632
[14]	Schwank J R, Winokur P S, Sexton F W 1986 IEEE Trans. Nucl. Sci. 33 1178
[15]	Liu S T, Balster S, Sinha S 1999 IEEE Trans. Nucl. Sci. 46 1817

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