The optimization of lithography process on the deep muti-stepped surface

Sun Li-Yuan; Gao Zhi-Yuan; Zou De-Shu; Zhang Lu; Ma Li; Tian Liang; Shen Guang-Di

doi:10.7498/aps.61.206801

Abstract

In this article, we investigate the problems existing in the lithography on the deep multi-stepped surface. Different photoresist thicknesses above and under the step are measured in experiment. The relationship between step height and photoresist thickness is discussed and numerically described. Based on the description of Beer model about the light absorption coefficient, the curves of different light transmittances at different times are analysed. Reasons why the light transmittance changes with time are explained, and the light absorption coefficient is believed to be related to photoresist thickness. On this basis, the lithography process is optimized. The patterns with narrow line-width under the deep step on the wafer are obtained.

Keywords:

multi-stepped /
lithography processes

Authors and contacts

1.
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
Funds: Project supported by the Scientific Research Staring Foundation for the Doctors, Beijing University of Technology, China (Grant No. X0002013201101) and the Scientific Research Foundation for the Graduates, Beijing University of Technology, China (Grant No. ykj-2011-6208).

References

[1]	Chen B Q 2011 Micronanoelectronic Technol. 48 1 (in Chinese) [陈宝钦 2011 微纳电子技术 48 1]
[2]	Chen B Q 2011 Micronanoelectronic Technol. 48 69 (in Chinese) [陈宝钦 2011 微纳电子技术 48 69]
[3]	Wen J, Yin H Q, Zhang R J, Cao W B 2007 Chin. J. Semicond. Sin. 28 357 (in Chinese) [文景, 尹海清, 张瑞娟, 曹文斌 2007 半导体学报 28 357]
[4]	Liu S J, Du J L, Duan Q, Luo B L, Tang X G, Guo Y K, Du C L 2005 Chin. J. Semicond. Sin. 26 1065 (in Chinese) [刘世杰, 杜惊雷, 段茜, 罗铂靓, 唐雄贵, 郭永康, 杜春雷 2007 半导体学报 28 357]
[5]	Dill F H 1996 IEEE Trans. Electron Dev. 22 440
[6]	Shao J X 1993 Semicond. Technol. 5 32 (in Chinese) [邵建新 1993 半导体技术 5 32]
[7]	Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 149 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 物理学报 55 149]

Cited By

[1]	Chen B Q 2011 Micronanoelectronic Technol. 48 1 (in Chinese) [陈宝钦 2011 微纳电子技术 48 1]
[2]	Chen B Q 2011 Micronanoelectronic Technol. 48 69 (in Chinese) [陈宝钦 2011 微纳电子技术 48 69]
[3]	Wen J, Yin H Q, Zhang R J, Cao W B 2007 Chin. J. Semicond. Sin. 28 357 (in Chinese) [文景, 尹海清, 张瑞娟, 曹文斌 2007 半导体学报 28 357]
[4]	Liu S J, Du J L, Duan Q, Luo B L, Tang X G, Guo Y K, Du C L 2005 Chin. J. Semicond. Sin. 26 1065 (in Chinese) [刘世杰, 杜惊雷, 段茜, 罗铂靓, 唐雄贵, 郭永康, 杜春雷 2007 半导体学报 28 357]
[5]	Dill F H 1996 IEEE Trans. Electron Dev. 22 440
[6]	Shao J X 1993 Semicond. Technol. 5 32 (in Chinese) [邵建新 1993 半导体技术 5 32]
[7]	Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 149 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 物理学报 55 149]

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