Effect of oxygen on stability performance of the IZO junctionless thin film transistors

Zhang Geng-Ming; Guo Li-Qiang; Zhao Kong-Sheng; Yan Zhong-Hui

doi:10.7498/aps.62.137201

Abstract

We report in this paper that low-voltage indium-zinc oxide (IZO) junctionless thin-film transistors (TFT) can be fabricated at room temperature, and the device stability performance influenced by oxygen pressure is studied. IZO junctionless TFT has a high mobility and novel structure, but the oxide channel layers are vulnerable due to the influence of oxygen and water molecules, which will lead to the degradation of the device stability. In this study, we fabricate transparent and conductive IZO thin-films at room temperature as channel layers, and source/drain electrodes by controlling the oxygen flow, and also analyze the effect of oxygen on the stability of oxide junctionless TFT. In order to operate at low-voltage (2 nanoparticle films as gate dielectric, which have electron double layers (EDL) effect and large gate capacitance, and the TFTs show excellent electrical performance with small operating voltage of 1 V, large on/off ratio(>106), small subthreshold swing(20 cm2/V·s). The study indicates that the resistivity of IZO thin-film fabricated in increasing oxygen content, leads the threshold voltage to drift in a positive direction, and makes operating mode of TFT change from depletion mode to enhanced mode.

Keywords:

Authors and contacts

1.
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education States Key Laboratory of Chemo/Biosensing and Chemometrics Hunan University, Changsha 410082, China;
2.
Ningbo Institute of Materials Technology & EngineeringChinese Academy of Sciences, Ningbo 315201, China

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[9]	Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J, Wu H Z, 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 物理学报 60 037305]
[10]	Fortunato E, Pimentel A, Goncalves A, Marques A, Martins R 2006 Thin Solid Films 502 104
[11]	Kang D, Lim H, Kim C, Song I, Park J, Park Y, Chung J 2007 Appl. Phys. Lett. 90 192101
[12]	Jiang J, Dai M Z, Sun J, Zhou B, Lu A X, Wan Q 2011 J. Appl. Phys. 109 054501
[13]	Zhao K S, Xuan R J, Han X, Zhang G M 2012 Acta Phys. Sin. 61 197201 (in Chinese) [赵孔胜, 轩瑞杰, 韩笑, 张耕铭 2012 物理学报 61 197201]
[14]	Jeong J K, Yang H W, Jeong J H, Mo Y G, Kim H D 2008 Appl. Phys. Lett. 93 123508

Cited By

[1]	Kim C, Huang P Y, Jhuang J W, Chen M C, Ho J C, Hu T S, Yan J Y, Chen L H, Lee G H, Facchetti A, Marks T J 2010 Org. Electron. 11 1363
[2]	Nie G Z, Peng J B, Zhou R L 2011 Acta Phys. Sin. 60 127304 (in Chinese) [聂国政, 彭俊彪, 周仁龙 2011 物理学报 60 127304]
[3]	Yuan G C, Xu Z, Zhao W L, Zhang F J, Xu N, Tian X Y, Xu X R 2009 Chin Phys. B 18 3990
[4]	Shi W W, Li W, Yi D M, Xie L H, Wei W, Huang W 2013 Acta Phys. Sin. 61 228502 (in Chinese) [石巍巍, 李雯, 仪明东, 解令海, 韦玮, 黄维 2013 物理学报 61 228502]
[5]	Ionescu A M 2010 Nature Nanotech. 5 178
[6]	Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher A M, McCarthy B, Murphy R 2010 Nature Nanotech. 5 225
[7]	Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Colinge J P 2009 Appl. Phys. Lett. 94 053511
[8]	Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J, Xu T N 2010 Acta Phys. Sin. 59 5022 (in Chinese) [吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健, 徐天宁 2010 物理学报 59 5022]
[9]	Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J, Wu H Z, 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 物理学报 60 037305]
[10]	Fortunato E, Pimentel A, Goncalves A, Marques A, Martins R 2006 Thin Solid Films 502 104
[11]	Kang D, Lim H, Kim C, Song I, Park J, Park Y, Chung J 2007 Appl. Phys. Lett. 90 192101
[12]	Jiang J, Dai M Z, Sun J, Zhou B, Lu A X, Wan Q 2011 J. Appl. Phys. 109 054501
[13]	Zhao K S, Xuan R J, Han X, Zhang G M 2012 Acta Phys. Sin. 61 197201 (in Chinese) [赵孔胜, 轩瑞杰, 韩笑, 张耕铭 2012 物理学报 61 197201]
[14]	Jeong J K, Yang H W, Jeong J H, Mo Y G, Kim H D 2008 Appl. Phys. Lett. 93 123508

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