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Silicon electro-optical modulators based on add-drop micro-ring resonators have the advantage of more freedom in designing high-extinction-ratio and large-bandwidth modulators without changing the ion doping processes of the chip. Here we design a high-speed silicon modulator based on an add-drop micro-ring resonator with a radius of 20 m; it demonstrates high extinction ratio with low reverse bias. How the coupling between the straight waveguide and the ring resonator affects the performances is studied theoretically and it is found that a lower coupling coefficient at drop port leads to a higher extinction ratio but not the best bandwidth. Therefore, a balance should be considered between extinction ratio and bandwidth. According to the optimized result of the parameters the device is fabricated and tested. The spectrum testing indicates that the device can have 12 dB extinction ratio when it is operated at 3 V reverse bias. Furthermore, we have observed 8 Gbps open-eye diagram with only 1.2 V peak-to-peak signal voltage.
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Keywords:
- electrode-optical modulator /
- silicon on insulator /
- micro-ring resonator /
- free-carrier dispersion effect
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[14] Liow T Y, Ang K W, Fang Q, Song J F, Xiong Y Z, Yu M B, Lo G Q, Kwong D L 2010 IEEE J. Sel. Top. Quantum Electron. 16 307
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[1] Wu Y P, Tao Y, Zhang J S, Wang Y G 2010 Acta Phys. Sin. 59 4395 (in Chinese) [吴懿平, 陶媛, 张金松, 王永国 2010 物理学报 59 4395]
[2] Miller D 2009 Proceedings of the IEEE 97 1166
[3] Jalali B, Fathpour S 2006 IEEE J. Lightwave Technol. 24 4600
[4] Reed G T, Mashanovich G, Gardes F Y, Thomson D J 2010 Nat. Photon. 4 518
[5] Li Y M, Liu Z, Xue C L, Li C B, Cheng B W, Wang Q M 2013 Acta Phys. Sin. 62 114208 (in Chinese) [李亚明, 刘智, 薛春来, 李传波, 成步文, 王启明 2013 物理学报 62 114208]
[6] Xu Q, Schmidt B, Pradhan S, Lipson M 2005 Nature 435 325
[7] Wang F, Qiu C, Xiao S M, Hao Y L, Jiang X Q, Wang M H, Yang J Y 2009 Chin. Phys. Lett. 26 104206
[8] Xu H, Xiao X, Li X Y, Hu Y T, Li Z Y, Chu T, Yu Y D, Yu J Z 2012 Opt. Express 20 15093
[9] Dong P, Liao S, Feng D, H. Liang, Zheng D, Shafiiha R, Kung C C, Qian W, Li G, Zheng X, Krishnamoorthy A V, Asghari M 2009 Opt. Express 17 22484
[10] Dong P, Liao S, Liang H, Qian W, Wang X, Shafiiha R, Feng D, Li G, Zheng X, Krishnamoorthy A V, Asghari M 2010 Opt. Lett. 35 3246
[11] Li G, Zheng X, Yao J, Thacker H, Shubin I, Luo Y, Raj K, Cunningham J E, Krishnamoorthy A V 2011 Opt. Express 19 20435
[12] Huang Q Z 2009 Ph.D. Dissertation (Beijing Graduate School of Chinese Academy of Sciences) (in Chinese) [黄庆忠 2009 博士学位论文 (北京: 中国科学院研究生院)]
[13] Ren G H, Chen S W, Cao T T 2012 Acta Phys. Sin. 61 034215 (in Chinese) [任光辉, 陈少武, 曹彤彤 2012 物理学报 61 034215]
[14] Liow T Y, Ang K W, Fang Q, Song J F, Xiong Y Z, Yu M B, Lo G Q, Kwong D L 2010 IEEE J. Sel. Top. Quantum Electron. 16 307
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