Influence of quantum wells on the quantum efficiency of GaAs solar cells

Ding Mei-Bin; Lou Chao-Gang; Wang Qi-Long; Sun Qiang

doi:10.7498/aps.63.198502

Abstract

Influences of InGaAs/GaAsP quantum wells on the quantum efficiency of GaAs solar cells are investigated. In addion of extending the absorption spectrum from 890 nm to 1000 nm, introduction of quantum wells has important effects on the quantum efficiency below 890 nm. In the range of shorter wavelengths(<680 nm), the GaAs control cells have higher quantum efficiencies, while in the longer wavelengths (680-890 nm), the quantum well solar cells have higher quantum efficiencies. This phenomenon can be explained by the difference in the absorption coefficients of quantum well structure and GaAs materials.

Keywords:

Authors and contacts

1.
School of Electronic Science & Applied Physics, HeFei University of Technology, Hefei 230009, China;
2.
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
3.
Tianjin Institute of Power Sources, Tianjin 300384, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No.60976047), the National High-tech R&D Program of China (Grant No. 2007AA05Z435), and the Natural Science Foundation of Jiangsu Province, China(Grant No.BK2011033).

References

[1]	Barnham K W J, Ballard I, Barnes J, Connolly J, Griffin P, Kluftinger B, Nelson J, Tsui E, Zachariou A 1997 Appl. Surf. Sci. 113-114 722
[2]	Barnham K W J, Connolly J P, Griffin P, Haarpaintner G, Nelson J, Tsui E, Zachariou A, Osborne J 1996 J. Appl. Phys. 80 1201
[3]	Ekins-Daukes N J, Barnham K W J, Connolly J P 1999 Appl. Phys. Letts. 75 4195
[4]	Zhao B J, Chen X, Ren Z W, Tong J H, Wang X F, Li D W, Zhuo X J, Zhang J, Yi H X, Li S T 2013 Chin. Phys. B 22 088401
[5]	Mazzer M, Barnham K W J, Ballard I M, Bessiere A, Ioannides A, Johnson D C, Lynch M C, Tibbits T N D, Roberts J S, Hill G, Calder C 2006 Thin Solid Films 511-512 76
[6]	Zhang X B, Wang X L, Xiao H L, Yang C B, Hou Q F, Yin H B, Chen H, Wang Z G 2011 Chin. Phys. B 20 028402
[7]	Lou C G, Sun Q, Xu J, Zhang X B, Lei W, Wang B P, Chen W J, Qiao Z X 2006 Chin. Phys. Letters 23 247
[8]	Lou C G, Yan T, Sun Q, Xu J, Zhang X B, Lei W 2008 Chinese Journal of Semiconductors 29 2088
[9]	Paxman M, Nelson J, Braun B, Connolly J, Barnham K W J 1993 J. Appl. Phys. 74 614
[10]	NREL, Reference Solar Spectral Irradiance: ASTM G-173
[11]	Hamaker H C 1985 J. Appl. Phys. 58 2344
[12]	Casey H C 1975 J. Appl. Phys. 46 250
[13]	Kailuweit P, Kellenbenz R, Philipps S P, Guter W, Bett A W, Dimroth F 2010 J. Appl. Phys. 107 064317
[14]	Miller D A B, Chemla D S, Damen T C, Gossard A C Wiegmann W 1985 Physical Review B 32 1043

Cited By

[1]	Barnham K W J, Ballard I, Barnes J, Connolly J, Griffin P, Kluftinger B, Nelson J, Tsui E, Zachariou A 1997 Appl. Surf. Sci. 113-114 722
[2]	Barnham K W J, Connolly J P, Griffin P, Haarpaintner G, Nelson J, Tsui E, Zachariou A, Osborne J 1996 J. Appl. Phys. 80 1201
[3]	Ekins-Daukes N J, Barnham K W J, Connolly J P 1999 Appl. Phys. Letts. 75 4195
[4]	Zhao B J, Chen X, Ren Z W, Tong J H, Wang X F, Li D W, Zhuo X J, Zhang J, Yi H X, Li S T 2013 Chin. Phys. B 22 088401
[5]	Mazzer M, Barnham K W J, Ballard I M, Bessiere A, Ioannides A, Johnson D C, Lynch M C, Tibbits T N D, Roberts J S, Hill G, Calder C 2006 Thin Solid Films 511-512 76
[6]	Zhang X B, Wang X L, Xiao H L, Yang C B, Hou Q F, Yin H B, Chen H, Wang Z G 2011 Chin. Phys. B 20 028402
[7]	Lou C G, Sun Q, Xu J, Zhang X B, Lei W, Wang B P, Chen W J, Qiao Z X 2006 Chin. Phys. Letters 23 247
[8]	Lou C G, Yan T, Sun Q, Xu J, Zhang X B, Lei W 2008 Chinese Journal of Semiconductors 29 2088
[9]	Paxman M, Nelson J, Braun B, Connolly J, Barnham K W J 1993 J. Appl. Phys. 74 614
[10]	NREL, Reference Solar Spectral Irradiance: ASTM G-173
[11]	Hamaker H C 1985 J. Appl. Phys. 58 2344
[12]	Casey H C 1975 J. Appl. Phys. 46 250
[13]	Kailuweit P, Kellenbenz R, Philipps S P, Guter W, Bett A W, Dimroth F 2010 J. Appl. Phys. 107 064317
[14]	Miller D A B, Chemla D S, Damen T C, Gossard A C Wiegmann W 1985 Physical Review B 32 1043

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