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Fast-pulse repetitive frequency emission characteristic of high current carbon nanotubes cathode

Xiang Fei Wu Ping Zeng Fan-Guang Wang Gan-Ping Li Chun-Xia Ju Bing-Quan

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Fast-pulse repetitive frequency emission characteristic of high current carbon nanotubes cathode

Xiang Fei, Wu Ping, Zeng Fan-Guang, Wang Gan-Ping, Li Chun-Xia, Ju Bing-Quan
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  • With the development of high power microwave technology, the demands for electron beam repetition frequency, current density, response time and emission uniformity are higher and higher. Carbon nanotube (CNt) cathode has been widely investigated, because of its special structure and excellent field emission characteristics. CNt cathode is regarded as a thin film high current cathode, and the interface bonding will affect vacuum performance, stability, lifetime and repeat ability. The direct growth of CNt is a simple and effective means for preparing cathode. When electron energy reaches 1 MeV and the pulse upward gradient attains approximately 60 kV/ns, for CNt cathode, its the emission beam intensity reaches 15 kA and the peak bundle density attains about 1 kA/cm2, the response between beam voltage and current is fast. With the increase of repetition frequency, the emission stability decreases gradually. When the emission power is 15 GW and the emission stability repetitive frequency is 50 Hz, the cathode emission is stable. However with the increase of frequency, the stability becomes weak. When the repetition frequency reaches 100 Hz, voltage and current are almost split into two sections, and the delay time is obviously different. The relation between the voltage and the current meet the exponent law, which is different from the field emission characteristic. After a 1000 shot emission, the morphology of CNt cathode is intact, desorption from the interface of CNt does not happen. So the emission mechanism is flashover plasma emission. Through analyzing the experimental data and considering the plasma expansion effect on diode gap, the plasma speed can be estimated to be about to 3.9 cm/μs.
    • Funds: Project supported by the Key Laboratory on High Power Microwave Technology, China.
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    [10]

    Liao Q L, Zhang Y, Xia L S, Qi J J, Huang Y H, Deng Z Q, Gao Z J, Cao J W 2008 Acta Phys. Sin. 57 2328 (in Chinese) [廖庆亮, 张跃, 夏连胜, 齐俊杰, 黄运华, 邓战强, 高战军, 曹佳伟 2008 物理学报 57 2328]

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    Chen Y, Zhang H, Liu X G, Xia L S, Yang A M 2011 Acta Phys. Sin. 60 080702 (in Chinese) [谌怡, 张篁, 刘星光, 夏连胜, 杨安民 2011 物理学报 60 080702]

  • [1]

    Yang D J, Wang S G, Zhang Q, Sellin P J, Chen G 2004 Phys. Lett. A 329 207

    [2]

    Novak J P, Lay M D, Perkins F K, Snow E S 2004 Solid-State Elec. 48 1753

    [3]

    Seelaboyina R, Huang J, Choi W B 2006 Appl. Phys. Lett. 88 194104

    [4]

    Bonard J M, Klinke C, Dean K A, Coll B F 2002 Phys. Rev. Lett. 89 7602

    [5]

    Shiffler D 2004 IEEE Trans. Plasma Sci. 32 2152

    [6]

    Dean K A, Chalamala B R 2000 Appl. Phys. Lett. 76 375

    [7]

    Fowler R H, Nordheim L 1928 Electron Emission in Intense Electric Fields (London: Proceeding of the Royal Society) A119:173

    [8]

    Ma H L, Huo H B, Zeng F G, Xiang F, Wang G P 2013 Acta Phys. Sin. 62 158801 (in Chinese) [麻华丽, 霍海波, 曾凡光, 向飞, 王淦平 2013 物理学报 62 158801]

    [9]

    Pushkarev A I, Sazonov R V 2009 IEEE Trans. Plasma Sci. 37 1901

    [10]

    Liao Q L, Zhang Y, Xia L S, Qi J J, Huang Y H, Deng Z Q, Gao Z J, Cao J W 2008 Acta Phys. Sin. 57 2328 (in Chinese) [廖庆亮, 张跃, 夏连胜, 齐俊杰, 黄运华, 邓战强, 高战军, 曹佳伟 2008 物理学报 57 2328]

    [11]

    Chen Y, Zhang H, Liu X G, Xia L S, Yang A M 2011 Acta Phys. Sin. 60 080702 (in Chinese) [谌怡, 张篁, 刘星光, 夏连胜, 杨安民 2011 物理学报 60 080702]

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Publishing process
  • Received Date:  24 December 2014
  • Accepted Date:  25 March 2015
  • Published Online:  05 August 2015

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