Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study on nanohardness of helium-implanted 4H-SiC

Zhang Chong-Hong Zhang Yong Zhou Li-Hong Li Bing-Sheng Yang Yi-Tao

Study on nanohardness of helium-implanted 4H-SiC

Zhang Chong-Hong, Zhang Yong, Zhou Li-Hong, Li Bing-Sheng, Yang Yi-Tao
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3851
  • PDF Downloads:  835
  • Cited By: 0
Publishing process
  • Received Date:  20 August 2009
  • Accepted Date:  29 October 2009
  • Published Online:  05 March 2010

Study on nanohardness of helium-implanted 4H-SiC

  • 1. (1)中国科学院近代物理研究所,兰州 730000; (2)中国科学院近代物理研究所,兰州 730000;中国科学院研究生院,北京 100049

Abstract: The hardness of 4H-SiC, which was high-temperature (500 K) helium-implanted to fluences of 3×1016 ions cm-2 and subsequently thermally annealed at the temperature ranging from 773 to 1273 K, was studied by nanoindentation. It is found that the hardness of the implanted 4H-SiC increases at the first, then decreases, and then increases again with increasing annealing tempeature in the temperature range of 500—1273 K, and significant increase in hardness is observed at 773 K. The behavior is ascribed to the changes of the density, length, and tangling of the covalent Si—C bond through the recombination of point defects, clustering of He-vacancy, and growth of helium bubbles during the thermal annealing.

Reference (22)

Catalog

    /

    返回文章
    返回