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Du Ming-Xing, Wei Ke-Xin. A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region. Acta Physica Sinica, 2011, 60(10): 108401. DOI: 10.7498/aps.60.108401
Citation: Du Ming-Xing, Wei Ke-Xin. A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region. Acta Physica Sinica, 2011, 60(10): 108401. DOI: 10.7498/aps.60.108401
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A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region

Acta Phys. Sin., 2011, 60(10): 108401.
DOI: 10.7498/aps.60.108401
CSTR: 32037.14.aps.60.108401
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