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A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region

Du Ming-Xing Wei Ke-Xin

A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region

Du Ming-Xing, Wei Ke-Xin
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  • PDF Downloads:  749
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  • Received Date:  04 March 2011
  • Accepted Date:  19 May 2011
  • Published Online:  15 October 2011

A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region

  • 1. School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072,China;Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China

Abstract: A physics-based model of insulated gate bipolar transistor (IGBT) with all free-carrier injection conditions in a base region is presented, from which the ambipolar transport equations (ATEs) in high-level injection and low-level injection are deduced separately. Moreover, the boundary conditions of ATE are determined. In a more compact solution a Fourier-series solution for the ATE is used in this paper. Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach. Physics-based IGBT model is used which is proved accurate.

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