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Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics

Hu Feng-Wei Bao Bo-Cheng Wu Hua-Gan Wang Chun-Li

Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics

Hu Feng-Wei, Bao Bo-Cheng, Wu Hua-Gan, Wang Chun-Li
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  • Memristor realized physically is recently a basic two-terminal circuit element with memory property. Based on Taylor series form of φ-q relationship, a charge-controlled memristor equivalent circuit analysis model is built. A charge-controlled memristor model with cubic nonlinearity is taken, as an example, to make a theoretical analysis of circuit characteristics, such as voltage-current relationship, active-passive property, and so on, of the charge-controlled memristor with different parameters. Results indicate that the voltage-current relationship of the charge-controlled memristor has an italic “8” shaped hysteresis loop characteristic, and the charge-controlled memristor shows passivity and activity accompanied with the variations of parameter symbols, resulting in the occurrence of the corresponding variations of circuit characteristics; compared with the passive memristor, the active memristor is more suitable for use as a second harmonic signal generation circuit. An experiment circuit is built based on the equivalent circuit of the charge-controlled memristor characteristic analysis, and the experimental results well verify the theoretical analysis.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51277017), and the Natural Science Foundations of Jiangsu Province, China (Grant No BK2012583).
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    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

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    Wang X B, Chen Y R, Xi H W, Li H, Dimitrov D 2009 IEEE Electron Device Lett. 30 294

    [5]

    Pershin Y V, Di Ventra M 2011 Adv. Phys. 60 145

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    Bao B C, Feng F, Dong W, Pan S H 2013 Chin. Phys. B 22 068401

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    Riaza 2010 IEEE Trans. Circuits Syst. II: Exp. Briefs 57 223

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    [10]

    Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 物理学报 60 120502]

    [11]

    Bao B C, Xu J P, Zhou G H, Ma Z H, Zou L 2011 Chin. Phys. B 20 120502

    [12]

    Muthuswamy B, Chua L O 2010 Int. J. Bifurc. Chaos 20 1567

    [13]

    Yu D S, Liang Y, Chen H, Iu H H C 2013 IEEE Trans. Circuits Syst. II: Exp. Briefs 60 207

    [14]

    Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510

    [15]

    Bao B C, Xu J P, Liu Z 2010 Chin. Phys. Lett. 27 070504

    [16]

    Li Z J, Zeng Y C 2013 Chin. Phys. B 22 040502

    [17]

    Witrisal K 2009 Electron. Lett. 45 713

    [18]

    Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese) [李智炜, 刘海军, 徐欣 2013 物理学报 62 096401]

    [19]

    Jia L N, Huang A P, Zheng X H, Xiao Z S 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松 2012 物理学报 61 217306]

    [20]

    Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502

    [21]

    Di Ventra M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717

    [22]

    Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese) [张旭, 周玉泽, 闭强, 杨兴华, 俎云霄 2010 物理学报 59 6673]

    [23]

    Song D H, L M F, Ren X, Li M M, Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese) [宋德华, 吕梦菲, 任翔, 李萌萌, 俎云霄 2012 物理学报 61 118101]

    [24]

    Biolková V, Kolka Z, Biolek Z, Biolek D 2010 Proc. of the European Conf. of Circuits Technology and Devices (ECCTD’10) Tenerife, Spain, 2010 p261

  • [1]

    Chua L O 1971 IEEE Trans. Circuit Theory CT-18 507

    [2]

    Chua L O 1976 Proc. IEEE 64 209

    [3]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

    [4]

    Wang X B, Chen Y R, Xi H W, Li H, Dimitrov D 2009 IEEE Electron Device Lett. 30 294

    [5]

    Pershin Y V, Di Ventra M 2011 Adv. Phys. 60 145

    [6]

    Bao B C, Feng F, Dong W, Pan S H 2013 Chin. Phys. B 22 068401

    [7]

    Joglekar Y N, Wolf S J 2009 Euro. J. Phys. 30 661

    [8]

    Riaza 2010 IEEE Trans. Circuits Syst. II: Exp. Briefs 57 223

    [9]

    Bao B C, Shi G D, Xu J P, Liu Z, Pan S H 2011 Sci China Ser. E-Tech. Sci. 54 2180

    [10]

    Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 物理学报 60 120502]

    [11]

    Bao B C, Xu J P, Zhou G H, Ma Z H, Zou L 2011 Chin. Phys. B 20 120502

    [12]

    Muthuswamy B, Chua L O 2010 Int. J. Bifurc. Chaos 20 1567

    [13]

    Yu D S, Liang Y, Chen H, Iu H H C 2013 IEEE Trans. Circuits Syst. II: Exp. Briefs 60 207

    [14]

    Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510

    [15]

    Bao B C, Xu J P, Liu Z 2010 Chin. Phys. Lett. 27 070504

    [16]

    Li Z J, Zeng Y C 2013 Chin. Phys. B 22 040502

    [17]

    Witrisal K 2009 Electron. Lett. 45 713

    [18]

    Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese) [李智炜, 刘海军, 徐欣 2013 物理学报 62 096401]

    [19]

    Jia L N, Huang A P, Zheng X H, Xiao Z S 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松 2012 物理学报 61 217306]

    [20]

    Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502

    [21]

    Di Ventra M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717

    [22]

    Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese) [张旭, 周玉泽, 闭强, 杨兴华, 俎云霄 2010 物理学报 59 6673]

    [23]

    Song D H, L M F, Ren X, Li M M, Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese) [宋德华, 吕梦菲, 任翔, 李萌萌, 俎云霄 2012 物理学报 61 118101]

    [24]

    Biolková V, Kolka Z, Biolek Z, Biolek D 2010 Proc. of the European Conf. of Circuits Technology and Devices (ECCTD’10) Tenerife, Spain, 2010 p261

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    [9] Wang Xiu-Zhi, Gao Jin-Song, Xu Nian-Xi. Quick analysis of miniaturized-element frequency selective surface that loaded with lumped elements by using an equivalent circuit model. Acta Physica Sinica, 2013, 62(20): 207301. doi: 10.7498/aps.62.207301
    [10] Xin Hong-Liang, Yuan Wang-Zhi, Cheng Jin-Ke, Lin Hong, Ruan Jian-Zhong, Zhao Zhen-Jie. The giant magneto-impedance effect and frequency dependence of magnetization processes in NiFeCoP/BeCu composite wire. Acta Physica Sinica, 2007, 56(7): 4152-4157. doi: 10.7498/aps.56.4152
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  • Received Date:  07 June 2013
  • Accepted Date:  21 July 2013
  • Published Online:  05 November 2013

Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics

  • 1. School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;
  • 2. Department of Electronic Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 51277017), and the Natural Science Foundations of Jiangsu Province, China (Grant No BK2012583).

Abstract: Memristor realized physically is recently a basic two-terminal circuit element with memory property. Based on Taylor series form of φ-q relationship, a charge-controlled memristor equivalent circuit analysis model is built. A charge-controlled memristor model with cubic nonlinearity is taken, as an example, to make a theoretical analysis of circuit characteristics, such as voltage-current relationship, active-passive property, and so on, of the charge-controlled memristor with different parameters. Results indicate that the voltage-current relationship of the charge-controlled memristor has an italic “8” shaped hysteresis loop characteristic, and the charge-controlled memristor shows passivity and activity accompanied with the variations of parameter symbols, resulting in the occurrence of the corresponding variations of circuit characteristics; compared with the passive memristor, the active memristor is more suitable for use as a second harmonic signal generation circuit. An experiment circuit is built based on the equivalent circuit of the charge-controlled memristor characteristic analysis, and the experimental results well verify the theoretical analysis.

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