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Researches on the electrical properties of vanadium oxide thin films on Si substrates

Xiong Ying Wen Qi-Ye Tian Wei Mao Qi Chen Zhi Yang Qing-Hui Jing Yu-Lan

Researches on the electrical properties of vanadium oxide thin films on Si substrates

Xiong Ying, Wen Qi-Ye, Tian Wei, Mao Qi, Chen Zhi, Yang Qing-Hui, Jing Yu-Lan
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  • Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation (011), the VO2 films have an excellent thermal-induced metal-insulator transition (MIT). The electrically-driven MIT (E-MIT) characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.
    • Funds: This work is financially supported by National Nature Science Foundation of China (Grant No. 61131005), Keygrant Project of Chinese Ministry of Education (Grant No. 313013), National High-tech Research and Development Projects (Grant No. 2011AA010204), New Century Excellent Talent Foundation (Grant No. NCET-11-0068), Sichuan Youth S T foundation (Grant No. 2011JQ0001), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110185130002).
    [1]

    Morin F J 1959 Phys. Rev. Lett. 3 34

    [2]

    Lysenko S, Rua A J, Vikhnin V, Jimenez J, Fernandez F, Liu H 2006 Appl. Surf. Sci. 252 5512

    [3]

    Guzman G, Beteille F, Morineau R, Livage J 1996 J. Mater. Chem. 6 505

    [4]

    Ko C and Ramanathan S 2008 Appl. Phys. Lett. 93 252101

    [5]

    Cao J, Ertekin E, Srinivasan V, Fan W, Huang S, Zheng H, Yim J W L, Khanal D R, Ogletree D F, Grossman J C, Wu J 2009 Nat. Nanotechnol. 4 732

    [6]

    Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, BernussiA, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 0535339

    [7]

    Ruzmetov D, Zawilski K T, Narayanamurti V, and Ramanathana S 2007 Journal of Appl. Phys. 102 13715

    [8]

    Kucharczy k D, Niklew ski T 1979 J. Appl. Cryst. 12 370

    [9]

    Zylbersztejn A Mott N F 1975 Phys. Rev. B 11 4383

    [10]

    Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108

    [11]

    Jeong J, Aetukuri N, Graf T, Schladt T D, Samant M G, Parkin, SSP 2013 Science 339 6126

    [12]

    Okimura K, Sakai J, Ramanathan S 2010 Journal of Applied Physics 107 063503

    [13]

    Wu T L, Whittaker L, Banerjee S, and Sambandamurthy G 2011 Phys. Rev. B 83 073101

    [14]

    Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Device Lett. 32 1582

    [15]

    Mo M M, Wen Q Y, Chen Z, Yang Q H, Qiu D H, Li S, Jing Y L, Zhang H W 2014 Chin. Phys. B 23 047803

    [16]

    Wen Q Y, Zhang H W, Yang Q H, Xie Y S, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111

    [17]

    Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837

    [18]

    Zhou Y, Chen X N, Ko Changhyun, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220

    [19]

    Tu K N, Ziegler J F, Kircher C J 1973 Appl. Phys. Lett. 23 493

    [20]

    Yuan N Y, Li J H, Li G, Chen X S 2006 Thin Solid Films 515 1275

    [21]

    Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 6 (in Chinese) [王利霞, 李建平, 何秀丽, 高晓光2006物理学报55 6]

    [22]

    Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese) [邱东鸿, 文岐业, 杨青慧, 陈智,荆玉兰, 张怀武 2013 物理学报 62 217201]

    [23]

    Fabien Béteille, Léo Mazerolles 1999 Materials Research Bulletin 34 2121

    [24]

    Borek M, Qian F, N agabushnam V, Singh R K 1993 Appl. Phys. Lett. 63 3288

    [25]

    Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533

    [26]

    Crunteanu A, Givernaud J, Leroy J, Mardivirin D, Champeaux C, OrliangesJ C, Catherinot A, Blondy P 2010 Sci. Technol. Adv. Mater. 11 065002

    [27]

    Dumas-Bouchiat F, Champeaux C, Catherinot A, Crunteanu A, Blondy P 2007 Appl. Phys. Lett. 91 223505

    [28]

    Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B-Condensed Matter 369 1

    [29]

    Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52

  • [1]

    Morin F J 1959 Phys. Rev. Lett. 3 34

    [2]

    Lysenko S, Rua A J, Vikhnin V, Jimenez J, Fernandez F, Liu H 2006 Appl. Surf. Sci. 252 5512

    [3]

    Guzman G, Beteille F, Morineau R, Livage J 1996 J. Mater. Chem. 6 505

    [4]

    Ko C and Ramanathan S 2008 Appl. Phys. Lett. 93 252101

    [5]

    Cao J, Ertekin E, Srinivasan V, Fan W, Huang S, Zheng H, Yim J W L, Khanal D R, Ogletree D F, Grossman J C, Wu J 2009 Nat. Nanotechnol. 4 732

    [6]

    Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, BernussiA, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 0535339

    [7]

    Ruzmetov D, Zawilski K T, Narayanamurti V, and Ramanathana S 2007 Journal of Appl. Phys. 102 13715

    [8]

    Kucharczy k D, Niklew ski T 1979 J. Appl. Cryst. 12 370

    [9]

    Zylbersztejn A Mott N F 1975 Phys. Rev. B 11 4383

    [10]

    Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108

    [11]

    Jeong J, Aetukuri N, Graf T, Schladt T D, Samant M G, Parkin, SSP 2013 Science 339 6126

    [12]

    Okimura K, Sakai J, Ramanathan S 2010 Journal of Applied Physics 107 063503

    [13]

    Wu T L, Whittaker L, Banerjee S, and Sambandamurthy G 2011 Phys. Rev. B 83 073101

    [14]

    Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Device Lett. 32 1582

    [15]

    Mo M M, Wen Q Y, Chen Z, Yang Q H, Qiu D H, Li S, Jing Y L, Zhang H W 2014 Chin. Phys. B 23 047803

    [16]

    Wen Q Y, Zhang H W, Yang Q H, Xie Y S, Chen K, Liu Y L 2010 Appl. Phys. Lett. 97 021111

    [17]

    Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837

    [18]

    Zhou Y, Chen X N, Ko Changhyun, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220

    [19]

    Tu K N, Ziegler J F, Kircher C J 1973 Appl. Phys. Lett. 23 493

    [20]

    Yuan N Y, Li J H, Li G, Chen X S 2006 Thin Solid Films 515 1275

    [21]

    Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 6 (in Chinese) [王利霞, 李建平, 何秀丽, 高晓光2006物理学报55 6]

    [22]

    Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese) [邱东鸿, 文岐业, 杨青慧, 陈智,荆玉兰, 张怀武 2013 物理学报 62 217201]

    [23]

    Fabien Béteille, Léo Mazerolles 1999 Materials Research Bulletin 34 2121

    [24]

    Borek M, Qian F, N agabushnam V, Singh R K 1993 Appl. Phys. Lett. 63 3288

    [25]

    Zhao Y, Lee J H, Zhu Y H, Nazari M, Chen C H, Wang H Y, Bernussi A, Holtz M, Fan Z Y 2012 J. Appl. Phys. 111 053533

    [26]

    Crunteanu A, Givernaud J, Leroy J, Mardivirin D, Champeaux C, OrliangesJ C, Catherinot A, Blondy P 2010 Sci. Technol. Adv. Mater. 11 065002

    [27]

    Dumas-Bouchiat F, Champeaux C, Catherinot A, Crunteanu A, Blondy P 2007 Appl. Phys. Lett. 91 223505

    [28]

    Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B-Condensed Matter 369 1

    [29]

    Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y, Lim Y S 2004 New J. Phys. 6 52

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  • Received Date:  14 August 2014
  • Accepted Date:  05 September 2014
  • Published Online:  05 January 2015

Researches on the electrical properties of vanadium oxide thin films on Si substrates

  • 1. State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
  • 2. National Key Laboratory of Science and Technology of Communication, University of Electronic Science and Technology of China, Chengdu 610054, China
Fund Project:  This work is financially supported by National Nature Science Foundation of China (Grant No. 61131005), Keygrant Project of Chinese Ministry of Education (Grant No. 313013), National High-tech Research and Development Projects (Grant No. 2011AA010204), New Century Excellent Talent Foundation (Grant No. NCET-11-0068), Sichuan Youth S T foundation (Grant No. 2011JQ0001), and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110185130002).

Abstract: Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation (011), the VO2 films have an excellent thermal-induced metal-insulator transition (MIT). The electrically-driven MIT (E-MIT) characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.

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