Some experimental investigations on the pressure dependence of resistivity and Hall coefficient of n- and p-type InSb samples with different doping (for n-type 5×1013-2.3×1018 cm-3; for p-type 2.6×1014-6.0×1017 cm-3) up to 12,500 kg/cm2 are given. A brief account of the pressure variation of the energy gap, carrier concentration, electron and hole mobilities, and also some preliminary discussion on the scattering mechanism of hole are presented.