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中国物理学会期刊

电子助进热丝化学汽相沉积金刚石薄膜

CSTR: 32037.14.aps.46.2206

CHARACTERIZATION STUDY OF TEXTURED DIAMOND FILMS GROWN ON SILICON (100) SUBSTRATE BY HOT FILAMENT CHEMICAL VAPOR DEPOSITION

CSTR: 32037.14.aps.46.2206
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  • 以CH4和H2为源反应气体,利用电子助进热丝化学汽相沉积(CVD)技术,在Si(100)晶面衬底上成功地得到了织构生长的金刚石薄膜.用扫描电子显微镜、Raman光谱、X射线衍射等多种技术对薄膜的形貌、成分、晶态等特性进行了分析,得到了在热丝CVD实验条件下织构生长金刚石薄膜的最佳工艺条件.

     

    In this paper, textured (100) diamond films are successfully grown on single crystalline (100) silicon substrate by bias enhanced hot filament chemical vapor deposition from a gas mixture of methane and hydrogen. The films show the well defined facet and are identified to be textured films by means of scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis. The effects of various parameters have been systematically investigated and the optimum conditions of films growth have been obtained.

     

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