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用蒙特卡罗法计算X射线在重金属界面的剂量增强系数

物理学报, 2001, 50(2): 189-192.
DOI: 10.7498/aps.50.189
CSTR: 32037.14.aps.50.189

MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE

Acta Phys. Sin., 2001, 50(2): 189-192.
DOI: 10.7498/aps.50.189
CSTR: 32037.14.aps.50.189
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  • 摘要

    当X射线射入不同材料组成的界面时,在低Z材料的一侧将产生剂量增强.介绍了界面剂量增强效应的基本原理,并用蒙特-卡洛程序计算了钨-硅、钽-硅、钨-二氧化硅和钽-二氧化硅界面的剂量增强系数.

     

    Abstract

    The dose would be enhanced on the low- Z material side when X-ray enters the interface constructed with two different materials.The mechanism of dose enhancement has been discussed and the Dose Enhancement Factors of W-Si,W-SiO2,Ta-Si and Ta-SiO2 interfaces are calculated by the Monte-Carlo method.

     

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