2001, 50(2): 189-192.
DOI: 10.7498/aps.50.189
CSTR: 32037.14.aps.50.189
2001, 50(2): 193-197.
DOI: 10.7498/aps.50.193
CSTR: 32037.14.aps.50.193
2001, 50(2): 198-203.
DOI: 10.7498/aps.50.198
CSTR: 32037.14.aps.50.198
2001, 50(2): 204-208.
DOI: 10.7498/aps.50.204
CSTR: 32037.14.aps.50.204
2001, 50(2): 209-216.
DOI: 10.7498/aps.50.209
CSTR: 32037.14.aps.50.209
2001, 50(2): 217-222.
DOI: 10.7498/aps.50.217
CSTR: 32037.14.aps.50.217
2001, 50(2): 223-226.
DOI: 10.7498/aps.50.223
CSTR: 32037.14.aps.50.223
2001, 50(2): 227-232.
DOI: 10.7498/aps.50.227
CSTR: 32037.14.aps.50.227
2001, 50(2): 233-238.
DOI: 10.7498/aps.50.233
CSTR: 32037.14.aps.50.233
2001, 50(2): 239-243.
DOI: 10.7498/aps.50.239
CSTR: 32037.14.aps.50.239
2001, 50(2): 244-250.
DOI: 10.7498/aps.50.244
CSTR: 32037.14.aps.50.244
2001, 50(2): 251-255.
DOI: 10.7498/aps.50.251
CSTR: 32037.14.aps.50.251
2001, 50(2): 256-261.
DOI: 10.7498/aps.50.256
CSTR: 32037.14.aps.50.256
2001, 50(2): 262-267.
DOI: 10.7498/aps.50.262
CSTR: 32037.14.aps.50.262
2001, 50(2): 268-272.
DOI: 10.7498/aps.50.268
CSTR: 32037.14.aps.50.268
2001, 50(2): 273-277.
DOI: 10.7498/aps.50.273
CSTR: 32037.14.aps.50.273
2001, 50(2): 278-286.
DOI: 10.7498/aps.50.278
CSTR: 32037.14.aps.50.278
2001, 50(2): 287-292.
DOI: 10.7498/aps.50.287
CSTR: 32037.14.aps.50.287
CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE
2001, 50(2): 293-298.
DOI: 10.7498/aps.50.293
CSTR: 32037.14.aps.50.293
2001, 50(2): 299-303.
DOI: 10.7498/aps.50.299
CSTR: 32037.14.aps.50.299
2001, 50(2): 304-309.
DOI: 10.7498/aps.50.304
CSTR: 32037.14.aps.50.304
2001, 50(2): 310-312.
DOI: 10.7498/aps.50.310
CSTR: 32037.14.aps.50.310
2001, 50(2): 313-318.
DOI: 10.7498/aps.50.313
CSTR: 32037.14.aps.50.313
2001, 50(2): 319-323.
DOI: 10.7498/aps.50.319
CSTR: 32037.14.aps.50.319
2001, 50(2): 324-328.
DOI: 10.7498/aps.50.324
CSTR: 32037.14.aps.50.324
2001, 50(2): 329-334.
DOI: 10.7498/aps.50.329
CSTR: 32037.14.aps.50.329
2001, 50(2): 335-340.
DOI: 10.7498/aps.50.335
CSTR: 32037.14.aps.50.335
2001, 50(2): 341-346.
DOI: 10.7498/aps.50.341
CSTR: 32037.14.aps.50.341
2001, 50(2): 354-360.
DOI: 10.7498/aps.50.354
CSTR: 32037.14.aps.50.354
2001, 50(2): 361-364.
DOI: 10.7498/aps.50.361
CSTR: 32037.14.aps.50.361
2001, 50(2): 365-368.
DOI: 10.7498/aps.50.365
CSTR: 32037.14.aps.50.365


