Semiconductor physics and devices
2025, 74 (24): 241302.
doi: 10.7498/aps.74.20251120
Abstract +
Luminescence and anisotropy in two-dimensional (2D) materials have important implications for both fundamental material physics and potential applications such as polarized light-emitting devices. However, many natural-occuring 2D materials typically exhibit either luminescence or anisotropy, but not both. In this work, we utilize van der Waals (vdW) engineering to construct a heterostructure (HS) with anisotropic luminescent properties, which is composed of isotropic monolayer (1L) MoS2 (with strong intrinsic luminescence) and low-symmetry NbIrTe4 (strong anisotropy without photoluminescence). Experimentally, we characterize the optical response of the HS by using angle-resolved PL spectroscopy. The results indicate that the intrinsic anisotropic potential field of NbIrTe4 at the interface effectively breaks the in-plane isotropic symmetry of MoS2, inducing a pronounced polarization-dependent emission of A and B excitons. The anisotropy ratio is enhanced to ~1.58, corresponding to a linear polarization degree of approximately 22%. This work provides new insights into 2D interfacial coupling and offers useful guidance for the design and engineering of next-generation high-performance, tunable polarized light-emitting devices.
