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COVER ARTICLE

Ultracold atomic imaging based on enhanced fringe removal method
Wang Shuai, Li Xi, Yao Xing-Can
2024, 73 (14): 146701. doi: 10.7498/aps.73.20240570
Abstract +
Absorption imaging is the foundation for quantitative measurements in experiments on ultracold atoms. This technique mainly involves capturing images of both the probing light field and the atom absorption light field. In this process, the unavoidable jitter of the probing light introduces imaging noise of fringe patterns into the atomic optical density distribution OD. In conventional fringe removal algorithms, this type of noise can be normalized by constructing an optimal reference image from multiple reference images that have been actually taken, which shares similar fringe patterns to an absorption image (Fig. (a)). Although this method works well in the region without atomic signal, they often overlook the modulation of the noise signal due to atomic absorption effects, leading to persistent residual fringes on the atom clouds. This problem becomes more pronounced with atomic density increasing. Here, we propose an enhanced fringe removal algorithm that takes into account the effects of atomic absorption, and actively modulates the intensity of the noise signal in the reference image constructed by conventional fringe removal algorithms (Fig. (b)), effectively preventing the residual fringes from forming, thus significantly improving the signal-to-noise ratio of the atomic images. When applied to the absorption imaging of homogeneous Fermi gases with high density, as shown in Fig. (d), this new algorithm successfully reduces the relative standard deviation of optical depth characterizing atomic density fluctuations by approximately 37%, which is about 3 times the relative standard deviation by conventional algorithm. Three subgraphs in Fig. (e) show the optical depth distribution at corresponding data points labeled by square boxes in Fig. (d). Furthermore, we also use this technique to quantitatively determine the second sound in the unitary Fermi superfluid of 6Li atoms. Compared with conventional fringe removal methods, our new algorithm increases the correlation function’s contrast of the density wave nearly 4 times, therefore enhancing the intensity of the density response spectrum by approximately 15% with half the measured standard error, paving the way for quantitatively determining the speed and attenuation of the second sound. These results demonstrate that the enhanced fringe removal algorithm not only effectively suppresses fringe noise, but also facilitates the identification and detection of important physical phenomena in high-density atomic systems, such as some collective excitations and new quantum phases.

EDITOR'S SUGGESTION

Using asynchronous optical sampling to measure timing jitter of electro-optic frequency combs
Ma Bo-Wen, Dai Wen, Meng Fei, Tao Jia-Ning, Wu Zi-Ling, Shi Yan-Qing, Fang Zhan-Jun, Hu Ming-Lie, Song You-Jian
2024, 73 (14): 144203. doi: 10.7498/aps.73.20240400
Abstract +
Electro-optic frequency combs (EOCs) are optical frequency combs constructed by phase modulation of single frequency lasers. The electro-optic modulated optical frequency combs have shown their unique advantages in many application fields due to their high repetition frequencies, high stabilities and other advantages, especially in precision measurement applications. Through accurate dispersion control, the electro-optical frequency combs can output ultra-short pulse laser sequences in the time domain, and their timing jitter characteristic is very important for precision measurement and other applications. This work presents a scheme to measure the timing jitter of the electro-optic combs directly in the time domain based on the principle of dual-comb asynchronous optical sampling method(ASOPS), which relies on temporal cross-correlation between the high repetition rate electro-optic combs and a low repetition rate passively mode-locked fiber laser. The ASOPS process allows timing jitter measurement in a magnified time scale where the timing jitter at a femtosecond level can be received and visualized by standard low speed electronics. We build a theoretical model for timing jitter measurement, conduct a numerical study to verify the model, and also construct an experimental system to characterize the period jitter of a 10-GHz electro-optic comb.Firstly, the theoretical model for measuring timing jitter is established. In this work, the basic theory of measuring the timing jitter is discussed by analyzing the histogram directly in time domain through using the obtained ASOPS signal. Subsequently, numerical simulations are conducted to simulate the ASOPS process after establishing a sequence of Gaussian pulse train with quantum limited timing jitter. Another pulse train without timing jitter serves as a local oscillator. Through the square law optical detection after sum-frequency generation between LO and LUT, the ASOPS process can be realized and periodic jitter can be obtained directly through histogram statistical analysis. The simulation result is consistent with the theoretical result very well. Finally, an EOC system with cascaded modulators at a repetition rate of 10 GHz is designed and built, and a timing jitter measurement system is designed and built with an all-fiber configuration. The period jitter of 10-GHz EOC is measured by using a 161-MHz mode-locked fiber laser as local oscillator. Histogram analysis shows that the period jitter of the EOC is 3.86 fs.This measurement technique does not require to use the intricate electrical phase-locked circuits or a high-speed photodetector to receive ultrashort pulses of EOC. Like the eye map analysis method commonly used in telecommunication, the histogram analysis can be used to determine the timing jitter approaching the quantum limit. This approach is easy to set up and operate, and it is anticipated to become a standard method of measuring period jitter of ultrashort pulse with high repetition frequency in a laboratory setting. It will be particularly useful for measuring timing jitters of the sources of novel high repetition rate optical frequency combs, such as micro-resonators and electro-optic frequency combs.

EDITOR'S SUGGESTION

Experimental study of confined diffusion of rough and smooth ellipsoidal colloids
Liang Jian, Wang Hua-Guang, Zhang Ze-Xin
2024, 73 (14): 148202. doi: 10.7498/aps.73.20240559
Abstract +
The study of diffusion in complex confined environments has received great attention in the field of condensed matter physics. The emergence of colloidal systems provides an excellent experimental model system for quantitatively studying the confined diffusion of microscopic particles. When colloidal particles change from spherical to ellipsoidal shape, the system presents anisotropic diffusion dynamics. Recent studies have found that rough surfaces, another important physical parameter of colloids, can lead to unusual rotational dynamics in spherical colloidal systems. However, due to the lack of a suitable experimental system, little is known about the effect of rough surfaces on the confined diffusion of ellipsoidal colloidal particles. In this work, rough colloidal spheres, rough colloidal ellipsoids, and smooth colloidal ellipsoids are prepared, and then monolayer colloidal samples are prepared to study the confined diffusions of these two types of ellipsoids in dense packing of the rough sphere colloids. By calculating the mean square displacement, intermediate self-scattering function, and orientation correlation function of the ellipsoids, we quantitatively characterize the diffusion dynamics of rough and smooth ellipsoids in varying concentrations of rough spheres. The results indicate that the translational diffusion and rotational diffusion of rough ellipsoids and smooth ellipsoids slow down as the concentration of rough spheres increases. This is due to the confinement of the ellipsoid by the surrounding spheres. At low stacking fractions of spheres, smooth and rough ellipsoids show similar translational diffusion and rotational diffusion. However, as the stacking fraction of spheres increases, there is a significant difference in advection diffusion between rough ellipsoids and smooth ellipsoids. The advection diffusion of rough ellipsoids is significantly slower than that of smooth ellipsoids. This is because the rough surface strongly inhibits rotation, meaning that the rotational diffusion of the rough ellipsoids is significantly slower than that of the smooth ellipsoids. By extracting the diffusion coefficients for translation and rotation from the ellipsoid's long-time mean-square displacements, we find that at ϕ = 0.60 and 0.65, the diffusion coefficients of rough ellipsoids are smaller than those of smooth ellipsoids. The translational diffusion coefficient of the rough ellipsoids is notably smaller than that of the smooth ellipsoids. However, the rotation diffusion coefficient of the rough ellipsoids is not significantly different from that of the smooth ellipsoids. This suggests that the rough surface mainly affect translational diffusion, strongly suppressing the translational diffusion of the ellipsoids. By calculating the displacement probability distribution for ellipsoidal motion, we find that at ϕ = 0.65, the translational displacements of rough ellipsoids have a relatively narrow distribution. This suggests that the translational motion of particles is suppressed by the rough surface. However, the distributions of rotation displacement for smooth ellipsoids and rough ellipsoids are very similar, indicating that the rough surface has less influence on particle rotation. At ϕ = 0.74, the rough surface suppresses both the translation and the rotation of the ellipsoid, resulting in a narrower displacement distribution than in the case of smooth ellipsoid. These findings suggest that rough surfaces significantly impede ellipsoidal diffusion, leading the translational and rotational motions not to occur simultaneously. This study provides an in-depth understanding of the role of rough surfaces of colloidal particles in confined diffusion, as well as an experimental basis for explaining the diffusion laws of rough materials.

EDITOR'S SUGGESTION

Left-handed polarized spin waves induced by spin polarized electric currents in ferromagnetic domain walls
Liu Xiang, Wang Xi-Guang, Li Zhi-Xiong, Guo Guang-Hua
2024, 73 (14): 147501. doi: 10.7498/aps.73.20240651
Abstract +
Polarization refers to the orientation of the wave oscillation which is a fundamental property of wave. It has been used widely to encode information in photonics and phononics. In magnonics, spin wave also has been used for transmitting and processing information. However, exploiting the spin wave polarization to design devices has not been achieved yet in ferromagnets as only the right-handed polarized spin waves can be accommodated in ferromagnets. Our eariler study suggests that the left-handed polarized spin waves can be introduced into ferromagnets by appling a spin-polarized electric current, thus making it possible to design spin wave devices with polarization encoding. But the critical current needed to induce left-handed polarized spin wave in a uniformly magnetized ferromagnet is too high to be realized experimentally. Magnetic domain wall can serve as spin wave guide, and the cutoff frequency of spin wave in a domain wall approaches zero. In this work, the dispersion relationship and propagation characteristics of spin wave in a Bloch domain wall are studied based on the Landau-Lifshitz equation in the presence of a spin-polarized electrical current. It is found that the stable left-handed spin wave can be generated in the domain wall with only a small current density. Micromagnetic simulations confirm the theoretical analysis results. In addition, due to the different excitation efficiencies and spin transfer torque induced propagating nonreciprocity of left- and right-handed polarized spin wave, it is possible to excite selectively the left- and right-handed polarized spin wave, as well as nearly linearly polarized spin waves. This study provides a practical and feasible solution for designing spin wave devices based on the polarization coding technique.

EDITOR'S SUGGESTION

Phase-field simulation of high-temperature corrosion of binary Zr-2.5Sn alloy
Liu Xu-Xi, Gao Shi-Sen, La Yong-Xiao, Yu Dong-Liang, Liu Wen-Bo
2024, 73 (14): 148201. doi: 10.7498/aps.73.20240393
Abstract +
Due to the small neutron absorption cross section and excellent thermal creep performance, zirconium alloy is one of the most important cladding materials for fuel rods in commercial fission reactors. However, quantitative analysis of the effects of temperature and grain boundaries on the corrosion microstructure evolution of zirconium alloys is still needed. The establishing of a phase field simulation for the corrosion process of polycrystalline zirconium alloy and the systematical investigating of the thermodynamic influence are both very important. In this study, the phase field model of the corrosion process in zirconium alloys is developed by combining corrosion electrochemistry through calculating the interfacial energy at the metal-oxide and oxide-fluid boundaries. Then the model is used to investigate the uniform corrosion behavior on the surface of Zr-2.5Sn alloy, which demonstrates that the corrosion kinetic curve follows a cubic rule. Subsequently, the influence of temperature on the corrosion thickening curve of zirconium alloy is examined, and good agreement between simulation and experimental results is achieved. It is observed that during early stage of oxide layer formation, there is a high growth rate with minimal temperature dependence; however, as the oxide layer thickness increases, temperature becomes a significant factor affecting its growth rate, with higher temperatures resulting in faster corrosion rates. Furthermore, the effect of polycrystalline zirconium alloy matrices on corrosion rate is investigated, revealing that the grain boundaries accelerate oxide layer thickening due to enhanced oxygen diffusion rates. At metal-oxide interface, O2– bands are formed in areas with higher O2– concentration along these grain boundaries towards the metal matrix, which mainly influences oxidation-corrosion rate during the initial oxidation stage.

EDITOR'S SUGGESTION

Physical mechanism of Ge doping enhanced Ruddlesden-Popper structure quasi-2D Sr3Sn2O7 ceramic hybrid improper ferroelectricity
Xiao Zhi-Feng, Wang Shou-Yu, Dai Ya-Ting, Kang Xin-Miao, Zhang Zhen-Hua, Liu Wei-Fang
2024, 73 (14): 147702. doi: 10.7498/aps.73.20240583
Abstract +
Hybrid improper ferroelectricity with quasi-two-dimensional (quasi-2D) structure has attracted much attention recently due to its great potential in realizing strong magnetoelectric coupling and room-temperature multiferroicity in a single phase. However, recent studies show that there appears high coercive field and low remnant polarization in ceramics, which severely hinders the applications of this material. In this work, high-quality Sr3Sn2O7 and Sr3Sn1.99Ge0.01O7 ceramics with a Ruddlesden-Popper (R-P) structure are successfully prepared, and their crystal structures and electrical properties are investigated in detail. It is found that the Sr3Sn2O7 ceramic exhibits a lower coercive field that is close to that of Sr3Sn2O7 single crystal. Moreover, via a small amount of Ge doping, the polarization reaches 0.34 μC/cm2 for Sr3Sn2O7 and 0.61 μC/cm2 for Sr3Sn1.99Ge0.01O7. Combining crystal lattice dynamic studies, we analyze the Raman and infrared responses of the samples, showing the information about the tilting and rotation of the oxygen octahedra in the samples. The improved ferroelectricity after doping may be attributed to the increased amplitude of the tilt mode and the reduced amplitude of rotation mode. Besides, the enhanced ferroelectric properties through Ge doping and its mechanism are further investigated by the Berry phase approach and the Born effective charge method. Furthermore, via the UV-visible spectra, the optical bandgap is determined to be 3.91 eV for Sr3Sn2O7 ceramic and 3.95 eV for Sr3Sn1.99Ge0.01O7 ceramic. Using the Becke-Johnson potential combined with the local density approximation correlation, the bandgap is calculated and is found to be in close agreement with the experimental result. And the electronic excitations can be assigned to the charge transfer excitation from O 2p to Sn 5s (Ge 4s). The effects of Ge doping on the ability of Sr3Sn2O7 to gain and lose electrons and the bonding strength of Sn-O bond are analyzed via two-dimensional charge density difference. In conclusion, this study provides insights into the synthesis method and modulation of ferroelectric properties of hybrid improper ferroelectrics Sr3Sn2O7, potentially facilitating their widespread applications in various capacitors and non-volatile memory devices.

EDITOR'S SUGGESTION

Structural phase transition induced enhancement of carrier mobility of monolayer RuSe2
Lu Kang-Jun, Wang Yi-Fan, Xia Qian, Zhang Gui-Tao, Chen Qian
2024, 73 (14): 146302. doi: 10.7498/aps.73.20240557
Abstract +
Transition metal dichalcogenides (TMDs) is an important member of two-dimensional material family, which has various crystal structures and physical properties, thus providing a broad platform for scientific research and device applications. The diversity of TMD's properties arises not only from their relatively large family but also from the variety of their crystal structure phases. The most common structure of TMD is the trigonal prismatic phase (H phase) and the octahedral phase (T phase). Studies have shown that, in addition to these two high-symmetry phases, TMD has other distorted phases. Distorted phase often exhibits different physical properties from symmetric phases and can perform better in certain systems. Because the structural differences between different distorted phases are sometimes very small, it is experimentally challenging to observe multiple distorted phases coexisting. Therefore, it is meaningful to theoretically investigate the structural stability and physical properties of different distorted phases. In this study, we investigate the structure and phase transition of monolayer RuSe2 through first-principles calculation. While confirming that its ground state is a the dimerized phase ($T^\prime$ phase), we find the presence of another energetically competitive trimerized phase ($T^{\prime\prime\prime}$ phase). By comparing the energy values of four different structures and combining the results of phonon spectra and molecular dynamics simulations, we predict the stability of the $T^{\prime\prime\prime}$ phase at room temperature. Because the H phase and T phase of two-dimensional RuSe2 have already been observed experimentally, and considering the fact that $T^{\prime\prime\prime}$ phase has much lower energy than the H and T phases, it is highly likely that the $T^{\prime\prime\prime}$ phase exists in experiment. Combining the calculations of the phase transition barrier and the molecular dynamics simulations, we anticipate that applying a slight stress to the $T^\prime$ phase structure at room temperature can induce a lattice transition from $T^\prime$phase to $T^{\prime\prime\prime}$ phase, resulting in significant changes in the band structure and carrier mobility, with the bandgap changing from an indirect bandgap of 1.11 eV to a direct bandgap of 0.71 eV, and the carrier mobility in the armchair direction increasing from $ 0.82 \times $$ 10^3 \, {\rm cm}^{2}{\cdot}{\rm V}^{-1}{\cdot}{\rm s}^{-1}$ to $3.22 \times 10^3 \, {\rm cm}^{2}{\cdot}{\rm V}^{-1}{\cdot}{\rm s}^{-1}$, an approximately threefold enhancement. In this work, two possible coexisting distorted phases in monolayer RuSe2 are compared with each other and studied, and their electronic structures and carrier mobilities are analyzed, thereby facilitating experimental research on two-dimensional RuSe2 materials and their applications in future electronic devices.

EDITOR'S SUGGESTION

Structural evolution of Ge20Se80–xTex glass networks and assessment of glass properties by theoretical bandgap
Xia Ke-Lun, Guan Yong-Nian, Gu Jie-Rong, Jia Guang, Wu Miao-Miao, Shen Xiang, Liu Zi-Jun
2024, 73 (14): 146303. doi: 10.7498/aps.73.20240637
Abstract +
Infrared imaging systems are being updated towards greater performance as well as lighter and smaller devices. Developing infrared materials with special properties is a critical for enhancing the performance of optical systems as well as miniaturizing devices. Chalcogenide glass becomes a popular option for advanced IR materials due to its component-property tunability. Se—based glasses such as Ge33As12Se55, Ge10As40Se50, and As40Se60, which completely cover the mid- and long-wave infrared windows, are the most typical materials used in infrared equipment. However, these classical materials can no longer meet the requirements of high-performance imaging systems, and adding more elements such as Te, Ga, Sb, and Ag to enhance the performance is a reliable way to solve this problem. By analysing the structure and properties of the Ge20Se80–xTex glass system, the law of its structure and properties evolving with Te content is illustrated. The obtained typical results are shown below. With the increase of Te content, the glass transition temperature (Tg) increases and then decreases, which is caused by the network structure and the average bond energy; the density and refractive index increase in an approximately linear gradient; the Abbe number gradually increases, while the Vickers hardness hardly changes with Te content; the fracture toughness decreases with the Te content increasing. Aiming at the problem that the average coordination number is unable to evaluate the glass systems composed of two or more elements from the same main group, a theoretical bandgap-glass property evaluation system is successfully established. The functional relationships among parameters such as density, refractive index, Abbe number, and fracture toughness, and theoretical band gap are established for Ge20Se80–xTex glass system as shown in the summary figure, which can be used to rapidly evaluate the glass components and properties.

EDITOR'S SUGGESTION

Computational reconstruction on-chip spectrometer based on reconfigurable silicon photonic filters
Zhang Zan, Huang Bei-Ju, Chen Hong-Da
2024, 73 (14): 140701. doi: 10.7498/aps.73.20240224
Abstract +
Spectroscopic analysis technique is an indispensable tool in many disciplines such as biomedical research, materials science, and remote sensing. Traditional benchtop spectrometers have several drawbacks; bulky, complex, and expensive, making them ineffective for emerging applications such as wearable health monitoring and Lab-on-Chip systems. Compared with bulky desktop spectrometers, integrated chip-level spectrometers find many applications in portable health monitoring, environmental sensing, and other scenarios. We design an on-chip spectrometer based on a silicon photonics platform. The device consists of a silicon photonic filter with a reconfigurable transmission spectrum.By changing the transmission spectrum of the filter, the multiple and diverse sampling of the input spectrum can be obtained. Using an artificial neural network algorithm, the incident spectrum is reconstructed from the sampled signals. The reconfigurable silicon photonic filter is composed of intercoupled Mach-Zehnder interferometer and micro-ring resonator. The introduction of thermal-optic phase shifter facilitates the reconstruction of the transmission spectrum of filter. Through this approach, a response function encompassing diverse features of broad and narrow spectra can be obtained from a single reconfigurable filter, eliminating the need for a filter array and significantly reducing the footprint of the spectrometer. Simulation results demonstrate that the designed device can achieve continuous and sparse spectrum reconstruction in a wavelength range of 1500–1600 nm, with a resolution of approximately 0.2 nm. On a test set composed of synthetic spectra, the calculated average RMSE for the reconstructed spectra is 0.0075, with an average relative error of 0.0174. Owing to the reconfigurable nature of the silicon photonic filter, this device exhibits the ability to flexibly adjust the number of sampling channels, thus enabling users to configure the chip according to specific application scenarios. This device possesses significant potential applications such as in wearable optical sensors and portable spectrometers.

EDITOR'S SUGGESTION

Low-density plasmas generated by electron beams passing through silicon nitride window
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong
2024, 73 (14): 144102. doi: 10.7498/aps.73.20240302
Abstract +
In general, more attention is paid to how to improve the characteristic parameters of plasma in plasma applications. However, in some cases, it is necessary to produce plasma with low-electron density, such as in the laboratory simulation of ionospheric plasma in space science. In this study, a low-density plasma is generated by electron beams passing through a silicon nitride transmission window under low pressure condition. The transmission properties of electron beam passing through silicon nitride films are investigated by Monte Carlo simulation, and the plasma feature is studied by a planar Langmuir probe and a digital camera. It is found that the plasma exhibits a conical structure with its apex located at the transmission window. At a constant pressure, the cone angle of conical plasma decreases with the electron energy increasing. This is qualitatively consistent with the Monte Carlo simulation result. The frequency of electron-neutral collisions increases as the working pressure rising, which leads the plasma cone angle to increase. When the beam current is reduced from 10 μA to 0.5 μA at 40 keV, the electron density decreases, in a range between 105 and 106 cm–3, while the electron temperature does not change significantly but approaches 1 eV. It can be inferred that the electron density decreases with the distance z from the transmission window in the incident direction of the electron beam. A low-density plasma of less than 105 cm–3 can be obtained further away from the transmission window.
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