[1] |
Liu Jie, Liu Yan-Xia. Embedded-atom method potential for Ti2AlNb alloys. Acta Physica Sinica,
2022, 71(20): 203401.
doi: 10.7498/aps.71.20220846
|
[2] |
Cao Zhen, Hao Da-Peng, Tang Gang, Xun Zhi-Peng, Xia Hui. Influence of cluster shaped defects on fracture process of fiber bundle. Acta Physica Sinica,
2021, 70(20): 204602.
doi: 10.7498/aps.70.20210310
|
[3] |
Yin Yuan, Li Ling, Yin Wan-Jian. Theoretical and computational study on defects of solar cell materials. Acta Physica Sinica,
2020, 69(17): 177101.
doi: 10.7498/aps.69.20200656
|
[4] |
Zhang Dong, Lou Wen-Kai, Chang Kai. Theoretical progress of polarized interfaces in semiconductors. Acta Physica Sinica,
2019, 68(16): 167101.
doi: 10.7498/aps.68.20191239
|
[5] |
Liu Hao-Hua, Wang Shao-Hua, Li Bo-Bo, Li Hua-Lin. Defect induced asymmetric soliton transmission in the nonlinear circuit. Acta Physica Sinica,
2017, 66(10): 100502.
doi: 10.7498/aps.66.100502
|
[6] |
Zhang Xiu-Zhi, Wang Kai-Yue, Li Zhi-Hong, Zhu Yu-Mei, Tian Yu-Ming, Chai Yue-Sheng. Effect of nitrogen on the defect luminescence in diamond. Acta Physica Sinica,
2015, 64(24): 247802.
doi: 10.7498/aps.64.247802
|
[7] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
|
[8] |
Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica,
2011, 60(9): 097101.
doi: 10.7498/aps.60.097101
|
[9] |
Chen Wen-Hao, Du Lei, Yin Xue-Song, Kang Li, Wang Fang, Chen Song. Investigation on the low-freauency noise physical models and the defects' characterization of the PbS infrared dectector. Acta Physica Sinica,
2011, 60(10): 107202.
doi: 10.7498/aps.60.107202
|
[10] |
Shi Li-Bin, Xiao Zhen-Lin. Origin of ferromagnetic properties in Ni doped ZnO by the first principles study. Acta Physica Sinica,
2011, 60(2): 027502.
doi: 10.7498/aps.60.027502
|
[11] |
Liang Zhi-Peng, Dong Zheng-Chao. Shot noise in the semiconductor/ferromagnetic d-wave superconductor tunnel junction. Acta Physica Sinica,
2010, 59(2): 1288-1293.
doi: 10.7498/aps.59.1288
|
[12] |
Chen Xiang-Lei, Zhang Jie, Du Huai-Jiang, Zhou Xian-Yi, Ye Bang-Jiao. Calculation of positron lifetime of compound semiconductors. Acta Physica Sinica,
2010, 59(1): 603-608.
doi: 10.7498/aps.59.603
|
[13] |
Zhao Wen-Bin, Zhang Guan-Jun, Yan Zhang. Investigation on surface damage phenomena induced by flashover across semiconductor. Acta Physica Sinica,
2008, 57(8): 5130-5137.
doi: 10.7498/aps.57.5130
|
[14] |
Wang Hai-Yun, Weng Hui-Min, Ling C. C.. Study of GaN/SiC contact using slow positron beam. Acta Physica Sinica,
2008, 57(9): 5906-5910.
doi: 10.7498/aps.57.5906
|
[15] |
Xia Zhi-Lin, Shao Jian-Da, Fan Zheng-Xiu. Effect of bulk inclusion in films on damage probability. Acta Physica Sinica,
2007, 56(1): 400-406.
doi: 10.7498/aps.56.400
|
[16] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
[17] |
Wu Shi-Gang, Shao Jian-Da, Fan Zheng-Xiu. Negative-ion element impurities breakdown model. Acta Physica Sinica,
2006, 55(4): 1987-1990.
doi: 10.7498/aps.55.1987
|
[18] |
Sun Xian-Kai, Lin Bi-Xia, Zhu Jun-Jie, Zhang Yang, Fu Zhu-Xi. Studies on the strain and its effect on defects in heteroepitaxial ZnO films prepared by LP-OCVD method. Acta Physica Sinica,
2005, 54(6): 2899-2903.
doi: 10.7498/aps.54.2899
|
[19] |
Li Peng-Fei, Yan Xiao-Hong, Wang Ru-Zhi. . Acta Physica Sinica,
2002, 51(9): 2139-2143.
doi: 10.7498/aps.51.2139
|
[20] |
TANG XUE-FENG, GU MU, TONG HONG-YONG, LIANG LING, YAO MING-ZHEN, CHEN LING-YAN, LIAO JING-YING, SHEN BIN-FU, QU XIANG-DONG, YIN ZHI-WEN, XU WEI-XIN, WANG JING-C HENG. A STUDY ON La-DOPED PbWO4 SCINTILLATING CRYSTAL. Acta Physica Sinica,
2000, 49(10): 2007-2010.
doi: 10.7498/aps.49.2007
|