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In order to characterize the defects of PbS thin film photoconductive infrared detector materials, The physical model of 1/f noise and g-r noise are deduced and verified. The surface trap densities under different voltages are calculated by the relation between 1/f noise and surface trap in this model. The phenomenon that the surface trap density increases with bias voltage is observed. Therefore, the conclusion that 1/f noise is proportional to bias voltage is drawn, and it is consistent with the experimental measurements. In addition, the relation between g-r noise and deep-level defect characterization parameters is investigated based on this model, and the method of using low frequency noise to characterize defect parameters including defect activate energy, degeneracy factor and capture section is presented.
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Keywords:
- infrared detector /
- 1/f noise /
- g-r noise /
- defect
[1] Wan X 1960 Infrared Photodetector and Materials (Beijing: Science Press) p29109 (in Chinese) [万 新 1960 红外光电探测器及其材料(北京: 科学出版社) 第29109页]
[2] Szentpali B, Rakovics V 2004 Noise and Information in Nanoelectronics, Sensors, and Standards Ⅱ, Maspalomas Gran Canaria Island, Spain, May 26,2004 p364
[3] [4] [5] Zhuang Y Q, Sun Q 1993 Noise and Minimizing Technology in Semiconductor Devices (Beijing: National Defense Industry Press) p64100 (in Chinese) [庄奕琪、 孙 青 1993 半导体器件中的噪声及其低噪声化技术(北京: 国防工业出版社) 第64100页]
[6] [7] Huang Y Ch, Liu D F, Liang J S, Gong H M 2005 Acta Phys. Sin. 54 2261(in Chinese) [黄杨程、 刘大福、 梁晋穗、 龚海梅 2005 物理学报 54 226]
[8] Leung B H, Fong W K, Zhu Ch F, Surya C 2001 IEEE Transactions on Electron Devices. 48 2400
[9] [10] [11] Mohammadi S, Pavlidis D 2000 IEEE Transactions on Electron Devices. 47 2009
[12] [13] Jevtic M 1995 20th International Conference on Microelectronics. Serbia,September 1214,1995 p1 219
[14] [15] Jones B K 1994 IEEE Transactions on Electron Devices. 41 2188
[16] [17] Jia B J, Ying M J, Zheng S D, Zhang J 2002 Laser and Infrared 32 51(in Chinese) [贾宝军、 应明炯、 郑甦丹、 张 健 2002 激光与红外 32 51]
[18] [19] Sun T, Chen X G, Hu X N, Li Y J 2005 Acta Phys.Sin. 54 3357(in Chinese) [孙 涛、 陈兴国、 胡晓宁、 李言瑾 2005 物理学报 54 3357]
[20] [21] Lin C T, Su Y K, Chang S J, Huang H T, Chang S M, Sun T P 1997 IEEE Photonics Technology Letters 9 232
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[1] Wan X 1960 Infrared Photodetector and Materials (Beijing: Science Press) p29109 (in Chinese) [万 新 1960 红外光电探测器及其材料(北京: 科学出版社) 第29109页]
[2] Szentpali B, Rakovics V 2004 Noise and Information in Nanoelectronics, Sensors, and Standards Ⅱ, Maspalomas Gran Canaria Island, Spain, May 26,2004 p364
[3] [4] [5] Zhuang Y Q, Sun Q 1993 Noise and Minimizing Technology in Semiconductor Devices (Beijing: National Defense Industry Press) p64100 (in Chinese) [庄奕琪、 孙 青 1993 半导体器件中的噪声及其低噪声化技术(北京: 国防工业出版社) 第64100页]
[6] [7] Huang Y Ch, Liu D F, Liang J S, Gong H M 2005 Acta Phys. Sin. 54 2261(in Chinese) [黄杨程、 刘大福、 梁晋穗、 龚海梅 2005 物理学报 54 226]
[8] Leung B H, Fong W K, Zhu Ch F, Surya C 2001 IEEE Transactions on Electron Devices. 48 2400
[9] [10] [11] Mohammadi S, Pavlidis D 2000 IEEE Transactions on Electron Devices. 47 2009
[12] [13] Jevtic M 1995 20th International Conference on Microelectronics. Serbia,September 1214,1995 p1 219
[14] [15] Jones B K 1994 IEEE Transactions on Electron Devices. 41 2188
[16] [17] Jia B J, Ying M J, Zheng S D, Zhang J 2002 Laser and Infrared 32 51(in Chinese) [贾宝军、 应明炯、 郑甦丹、 张 健 2002 激光与红外 32 51]
[18] [19] Sun T, Chen X G, Hu X N, Li Y J 2005 Acta Phys.Sin. 54 3357(in Chinese) [孙 涛、 陈兴国、 胡晓宁、 李言瑾 2005 物理学报 54 3357]
[20] [21] Lin C T, Su Y K, Chang S J, Huang H T, Chang S M, Sun T P 1997 IEEE Photonics Technology Letters 9 232
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