Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Researching progress of the 1/f noise in TMR and GMR sensors

Wu Shao-Bing Chen Shi Li Hai Yang Xiao-Fei

Citation:

Researching progress of the 1/f noise in TMR and GMR sensors

Wu Shao-Bing, Chen Shi, Li Hai, Yang Xiao-Fei
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • The low-frequency noise is the most important influence on the low frequency resolution and sensitivity in tunnel junction magnetoresistance(TMR) sensors and giant magnetoresistance (GMR) sensor for the large noise power density. In this paper, We describe the 1/f noise characteristics, sources, theoretical models, testing methods and noise reduction measures for TMR sensors and GMR sensors, and the detailed physical model of 1/f noise in the tunnel junction magnetoresistive sensor is explained. By nano-simulation software Virtual NanoLab, Fe/MgO/Fe magnetic tunnel junctions (MTJs) with different thicknesses of MgO layer are studied. Their tunneling probabilities and TMR change rates are simulated and calculated, the conservative and the optimistic estimates of the Change rate of TMR are 98.1 % and 10324.55%.While the influence of MgO thickness on noise is studied through the MTJ model. To study the noise dependance on external magnetic field, an magnetic shielding equipment for noise measurement is set up, and the tests show that the noise in the magnetic shielding environment is significantly reduced.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60871018).
    [1]

    Scola J, Polovy H, Fermon C, Pannetier M, Feng G, Fahy K, Coey J M 2007 Appl. Phys. Lett. 90 252501

    [2]

    Kurt H, Oguz K, Niizeki T, Coey J M D 2010 J. Appl. Phys. 107 083920

    [3]

    Edelstein A S, Fischer G, Pulskamp J, Pedersen M, Bernard W 2006 J. Appl. Phys. 99 08B317

    [4]

    Stutzke N A, Russek S E, Pappas D P, Tondra M 2005 J. Appl. Phys. 97 10Q107

    [5]

    Peng S Q, Du L, Zhuang Y Q, Bao J L, He L, Chen W H 2008 Acta Phys. Sin. 57 5205 (in Chinese) [彭绍泉, 杜磊, 庄弈琪, 包军林, 何亮, 陈伟华 2008 物理学报 57 5205]

    [6]

    Du L, Zhuang Y Q, Xue L J 2002 Acta Phys. Sin. 51 2836(in Chinese) [杜磊, 庄弈琪, 薛丽君 2002 物理学报 51 2836]

    [7]

    Liang Z P, Dong Z C 2010 Acta Phys. Sin. 59 1288 (in Chinese) [梁志鹏, 董正超 2010 物理学报 59 1288]

    [8]

    Yu G Q, Diao Z, Feng J F, Kurt H, Han X F, Coey J M D 2011 Appl. Phys. Lett. 98 112504

    [9]

    Feng J F, Diao Z, Feng G, Nowak E R, Coey J M D 2010 Appl. Phys.Lett. 96 052504

    [10]

    Herranz D, Bonell F, Gomez-Ibarlucea A 2010 J. Appl. Phys. 96 202501

    [11]

    Guerrero R, Pannetier-Lecoeur M, Fermon C, Cardoso S, Freitas P P 2009 J. Appl. Phys. 105 113922

    [12]

    Egelhoff Jr W F, Pong P W T, Unguris J, McMichael R D, Nowakc E R, Edelsteind A S, Burnetted J E, Fischer G A 2009 Sens. Actuators 155 217

    [13]

    Nowak E R, Weissman M B, Parkin S S P 1999 Appl. Phys. Lett. 74 600

    [14]

    Jiang L, Nowak E R, Scott P E, Johnson J, Slaughter J M, Sun J J 2004 Phys. Rev. B 69 054407

    [15]

    Nowak E R, Merithew R D, Weissman M B, Bloom I, Parkin S S P 1998 J. Appl. Phys. 84 6195

    [16]

    Ingvarsson S, Xiao G, Parkin S S P, Gallagher W J, Grinstein G, Koch R H 2000 Phys. Rev. Lett. 85 3289

    [17]

    Gokce A, Nowak E R, Yang S H, Pankin S S P 2006 J. Appl. Phys. 99 08A906

    [18]

    Stearrett R, Wang W G, Shah L R, Gokce Aisha, Xiao J Q, Nowak E R 2010 J. Appl. Phys. 107 064502

    [19]

    Bhattacharya D K, Vaidyanathan S 1997 J. Magn. Magn. Mater. 166 111

    [20]

    Hooge F N, Kleinpenning T G M, Vandamme L K J 1981 Rep. Prog. Phys. 44 31

    [21]

    Xiao M, Klaassen K B 2000 IEEE Trans. Magn. 36 5

    [22]

    Ren C, Liu X, Schrag B D, Xiao G 2004 Phys. Rev. B 69 104405

    [23]

    Klaassen K B, Van Peppen J C L, Xing X 2005 J. Appl. Phys. 93 8573

    [24]

    Ozbay A, Gokce A, Flanagan T, Stearrett R A, Nowak E R, Nordman C 2009 Appl. Phys. Lett. 94 023502

    [25]

    Smith N, Amett P 2001 Appl. Phys. Lett. 78 1448

    [26]

    Almeida J M, Ferreira R, Freitas P P, Langer J, Ocker B, Maass W 2006 J. Appl. Phys. 99 08B314

    [27]

    Jander A, Nordman C A, Pohm A V, Anderson J M 2003 J.Appl. Phys. 93 10

    [28]

    Tsang C, Fontana R E, Lin T, Heim D E 1994 IEEE Trans. Magn. 30 3801

    [29]

    Ferreira R, Wisniowski P, Freitas P P, Langer J, Ocker B, Maass W 2006 J. Appl. Phys. 99 08K706

    [30]

    Wang W G, Ni C, Rumaiz A, Wang Y, Fan X, Moriyama T, Cao R, Wen Q Y, Zhang H W, Xiao J Q 2008 Appl. Phys. Lett. 92 152501

    [31]

    Dutta P, Horn P M 1981 Rev. Mod. Phys. 53 497

    [32]

    Wang W G, Jordan-Sweet J, Miao G X, Ni C, Rumaiz A K, Shah L R, Fan X, Parsons P, Stearrett R, Nowak E R, Moodera J S, Xiao J Q 2009 Appl. Phys. Lett. 95 242501

    [33]

    Liou S H, Zhang R, Russek S E, Yuan L, Halloran S T, Pappas D P 2008 J. Appl. Phys. 103 07E920

    [34]

    Aliev F G, Guerrero R, Herranz D, Villar R 2007 Appl. Phys. Lett. 91 232504

    [35]

    Veloso A, Freitas P P, Wei P, Barradas N P, Soares J C, Almeida B, Sousa J B 2000 Appl. Phys. Lett. 77 1020

    [36]

    Hasegawa N, Koile F, Ikarashi K, Ishizone M, Lawamura M, Nakazawa Y, Takahashi A 2002 J. Appl. Phys. 91 8774

    [37]

    Park W K, Moodera J S, Taylor J, Tondra M, Daughton J M, Thomas A, Bruckl H 2003 J. Appl. Phys. 93 7020

    [38]

    Ferreira R, Wisniowski P, Freitas P P, Langer J, Ocker B, Maass W 2006 J. Appl. Phys. 99 08K706

    [39]

    Mazumdar D, Liu X, Schrag B D, Shen W, Carter M, Xiao G 2007 J. Appl. Phys. 101 09B502

    [40]

    Mazumdar D, Liu X, Schrag B D, Carter M, Shen W, Xiao G 2007 Appl. Phys. Lett. 91 033507

    [41]

    Schrag B D, Anguelouch A, Invarsson S, Xiao G, Lu Y, Trouilloud P L, Gupta A, Wanner R A, Gallagher W J, Rice P M, Parkin S S P 2000 Appl. Phys. Lett. 77 2373

    [42]

    Chaves R C, Freitas P P, Ocker B, Maass W 2007 Appl. Phys. Lett. 91 102504

    [43]

    Chaves R C, Freitas P P, Ocker B, Maass W 2008 J. Appl. Phys. 103 07E931

    [44]

    Lhermet H, Cuchet R, Rochaz L V, Vaudaine M H 2000 IEEE Trans.Magn. 36 5

    [45]

    Nor A F M, Hill E W 2002 IEEE Trans.Magn. 38 5

    [46]

    Diao Z, Feng J F, Kurt H 2010 Appl. Phys. Lett. 96 202506

    [47]

    Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F, Ohno H 2008 Appl. Phys. Lett. 93 082508

  • [1]

    Scola J, Polovy H, Fermon C, Pannetier M, Feng G, Fahy K, Coey J M 2007 Appl. Phys. Lett. 90 252501

    [2]

    Kurt H, Oguz K, Niizeki T, Coey J M D 2010 J. Appl. Phys. 107 083920

    [3]

    Edelstein A S, Fischer G, Pulskamp J, Pedersen M, Bernard W 2006 J. Appl. Phys. 99 08B317

    [4]

    Stutzke N A, Russek S E, Pappas D P, Tondra M 2005 J. Appl. Phys. 97 10Q107

    [5]

    Peng S Q, Du L, Zhuang Y Q, Bao J L, He L, Chen W H 2008 Acta Phys. Sin. 57 5205 (in Chinese) [彭绍泉, 杜磊, 庄弈琪, 包军林, 何亮, 陈伟华 2008 物理学报 57 5205]

    [6]

    Du L, Zhuang Y Q, Xue L J 2002 Acta Phys. Sin. 51 2836(in Chinese) [杜磊, 庄弈琪, 薛丽君 2002 物理学报 51 2836]

    [7]

    Liang Z P, Dong Z C 2010 Acta Phys. Sin. 59 1288 (in Chinese) [梁志鹏, 董正超 2010 物理学报 59 1288]

    [8]

    Yu G Q, Diao Z, Feng J F, Kurt H, Han X F, Coey J M D 2011 Appl. Phys. Lett. 98 112504

    [9]

    Feng J F, Diao Z, Feng G, Nowak E R, Coey J M D 2010 Appl. Phys.Lett. 96 052504

    [10]

    Herranz D, Bonell F, Gomez-Ibarlucea A 2010 J. Appl. Phys. 96 202501

    [11]

    Guerrero R, Pannetier-Lecoeur M, Fermon C, Cardoso S, Freitas P P 2009 J. Appl. Phys. 105 113922

    [12]

    Egelhoff Jr W F, Pong P W T, Unguris J, McMichael R D, Nowakc E R, Edelsteind A S, Burnetted J E, Fischer G A 2009 Sens. Actuators 155 217

    [13]

    Nowak E R, Weissman M B, Parkin S S P 1999 Appl. Phys. Lett. 74 600

    [14]

    Jiang L, Nowak E R, Scott P E, Johnson J, Slaughter J M, Sun J J 2004 Phys. Rev. B 69 054407

    [15]

    Nowak E R, Merithew R D, Weissman M B, Bloom I, Parkin S S P 1998 J. Appl. Phys. 84 6195

    [16]

    Ingvarsson S, Xiao G, Parkin S S P, Gallagher W J, Grinstein G, Koch R H 2000 Phys. Rev. Lett. 85 3289

    [17]

    Gokce A, Nowak E R, Yang S H, Pankin S S P 2006 J. Appl. Phys. 99 08A906

    [18]

    Stearrett R, Wang W G, Shah L R, Gokce Aisha, Xiao J Q, Nowak E R 2010 J. Appl. Phys. 107 064502

    [19]

    Bhattacharya D K, Vaidyanathan S 1997 J. Magn. Magn. Mater. 166 111

    [20]

    Hooge F N, Kleinpenning T G M, Vandamme L K J 1981 Rep. Prog. Phys. 44 31

    [21]

    Xiao M, Klaassen K B 2000 IEEE Trans. Magn. 36 5

    [22]

    Ren C, Liu X, Schrag B D, Xiao G 2004 Phys. Rev. B 69 104405

    [23]

    Klaassen K B, Van Peppen J C L, Xing X 2005 J. Appl. Phys. 93 8573

    [24]

    Ozbay A, Gokce A, Flanagan T, Stearrett R A, Nowak E R, Nordman C 2009 Appl. Phys. Lett. 94 023502

    [25]

    Smith N, Amett P 2001 Appl. Phys. Lett. 78 1448

    [26]

    Almeida J M, Ferreira R, Freitas P P, Langer J, Ocker B, Maass W 2006 J. Appl. Phys. 99 08B314

    [27]

    Jander A, Nordman C A, Pohm A V, Anderson J M 2003 J.Appl. Phys. 93 10

    [28]

    Tsang C, Fontana R E, Lin T, Heim D E 1994 IEEE Trans. Magn. 30 3801

    [29]

    Ferreira R, Wisniowski P, Freitas P P, Langer J, Ocker B, Maass W 2006 J. Appl. Phys. 99 08K706

    [30]

    Wang W G, Ni C, Rumaiz A, Wang Y, Fan X, Moriyama T, Cao R, Wen Q Y, Zhang H W, Xiao J Q 2008 Appl. Phys. Lett. 92 152501

    [31]

    Dutta P, Horn P M 1981 Rev. Mod. Phys. 53 497

    [32]

    Wang W G, Jordan-Sweet J, Miao G X, Ni C, Rumaiz A K, Shah L R, Fan X, Parsons P, Stearrett R, Nowak E R, Moodera J S, Xiao J Q 2009 Appl. Phys. Lett. 95 242501

    [33]

    Liou S H, Zhang R, Russek S E, Yuan L, Halloran S T, Pappas D P 2008 J. Appl. Phys. 103 07E920

    [34]

    Aliev F G, Guerrero R, Herranz D, Villar R 2007 Appl. Phys. Lett. 91 232504

    [35]

    Veloso A, Freitas P P, Wei P, Barradas N P, Soares J C, Almeida B, Sousa J B 2000 Appl. Phys. Lett. 77 1020

    [36]

    Hasegawa N, Koile F, Ikarashi K, Ishizone M, Lawamura M, Nakazawa Y, Takahashi A 2002 J. Appl. Phys. 91 8774

    [37]

    Park W K, Moodera J S, Taylor J, Tondra M, Daughton J M, Thomas A, Bruckl H 2003 J. Appl. Phys. 93 7020

    [38]

    Ferreira R, Wisniowski P, Freitas P P, Langer J, Ocker B, Maass W 2006 J. Appl. Phys. 99 08K706

    [39]

    Mazumdar D, Liu X, Schrag B D, Shen W, Carter M, Xiao G 2007 J. Appl. Phys. 101 09B502

    [40]

    Mazumdar D, Liu X, Schrag B D, Carter M, Shen W, Xiao G 2007 Appl. Phys. Lett. 91 033507

    [41]

    Schrag B D, Anguelouch A, Invarsson S, Xiao G, Lu Y, Trouilloud P L, Gupta A, Wanner R A, Gallagher W J, Rice P M, Parkin S S P 2000 Appl. Phys. Lett. 77 2373

    [42]

    Chaves R C, Freitas P P, Ocker B, Maass W 2007 Appl. Phys. Lett. 91 102504

    [43]

    Chaves R C, Freitas P P, Ocker B, Maass W 2008 J. Appl. Phys. 103 07E931

    [44]

    Lhermet H, Cuchet R, Rochaz L V, Vaudaine M H 2000 IEEE Trans.Magn. 36 5

    [45]

    Nor A F M, Hill E W 2002 IEEE Trans.Magn. 38 5

    [46]

    Diao Z, Feng J F, Kurt H 2010 Appl. Phys. Lett. 96 202506

    [47]

    Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F, Ohno H 2008 Appl. Phys. Lett. 93 082508

  • [1] Liu Ying, Guo Si-Lin, Zhang Yong, Yang Peng, Lyu Ke-Hong, Qiu Jing, Liu Guan-Jun. Review on 1/f noise and its research progress in two-dimensional material graphene. Acta Physica Sinica, 2023, 72(1): 017302. doi: 10.7498/aps.72.20221253
    [2] Song Zhi-Jun, Lü Zhao-Zheng, Dong Quan, Feng Jun-Ya, Ji Zhong-Qing, Jin Yong, Lü Li. Shot noise measurement for tunnel junctions using a homemade cryogenic amplifier at dilution refrigerator temperatures. Acta Physica Sinica, 2019, 68(7): 070702. doi: 10.7498/aps.68.20190114
    [3] Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104. doi: 10.7498/aps.64.136104
    [4] Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui. 1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica, 2013, 62(14): 140703. doi: 10.7498/aps.62.140703
    [5] Chen Hai-Peng, Cao Jun-Sheng, Guo Shu-Xu. Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser. Acta Physica Sinica, 2013, 62(10): 104209. doi: 10.7498/aps.62.104209
    [6] Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica, 2012, 61(6): 067801. doi: 10.7498/aps.61.067801
    [7] Li Yang, Guo Shu-Xu. A new method to estimate the parameter of 1/f Noise of high power semiconductor laser diode based on sparse decomposition. Acta Physica Sinica, 2012, 61(3): 034208. doi: 10.7498/aps.61.034208
    [8] Dai Yu, Zhang Jian-Xun. Reduction of 1/f noise in semiconductor devices based on wavelet transform and Wiener filter. Acta Physica Sinica, 2011, 60(11): 110516. doi: 10.7498/aps.60.110516
    [9] Chen Wen-Hao, Du Lei, Yin Xue-Song, Kang Li, Wang Fang, Chen Song. Investigation on the low-freauency noise physical models and the defects' characterization of the PbS infrared dectector. Acta Physica Sinica, 2011, 60(10): 107202. doi: 10.7498/aps.60.107202
    [10] Bao Jun-Lin, Lin Li-Yan, He Liang, Du Lei. Noise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage. Acta Physica Sinica, 2011, 60(4): 047202. doi: 10.7498/aps.60.047202
    [11] Zhang Zhen-Guo, Gao Feng-Li, Guo Shu-Xu, Li Xue-Yan, Yu Si-Yao. A novel method to estimate the parameters of 1/f noise of semiconductor laser diodes. Acta Physica Sinica, 2009, 58(4): 2772-2775. doi: 10.7498/aps.58.2772
    [12] Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica, 2008, 57(8): 5205-5211. doi: 10.7498/aps.57.5205
    [13] Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874. doi: 10.7498/aps.57.5869
    [14] Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica, 2007, 56(6): 3400-3406. doi: 10.7498/aps.56.3400
    [15] Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389. doi: 10.7498/aps.55.1384
    [16] Kuang Deng-Feng, Liu Qing-Gang, Hu Xiao-Tang, Hu Liu-Chang, Guo Wei-Lian. Fabrication and properties of nano metric tunneling junction. Acta Physica Sinica, 2006, 55(1): 80-83. doi: 10.7498/aps.55.80
    [17] Yu Dun-Bo, Feng Jia-Feng, Du Yong-Sheng, Han Xiu-Feng, Yan Hui, Ying Qi-Ming, Zhang Guo-Cheng. Composition-modulated hybrid tunnel junctions of La1-xSrxMnO3. Acta Physica Sinica, 2005, 54(10): 4903-4908. doi: 10.7498/aps.54.4903
    [18] Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica, 2005, 54(5): 2118-2122. doi: 10.7498/aps.54.2118
    [19] Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(7): 3357-3362. doi: 10.7498/aps.54.3357
    [20] DONG ZHENG-CHAO, XING DING-YU, DONG JIN-MING. SHOT NOISE IN FERROMAGNET-SUPERCONDUCTOR TUNNELING JUNCTION. Acta Physica Sinica, 2001, 50(3): 556-560. doi: 10.7498/aps.50.556
Metrics
  • Abstract views:  11615
  • PDF Downloads:  1385
  • Cited By: 0
Publishing process
  • Received Date:  11 July 2011
  • Accepted Date:  10 May 2012
  • Published Online:  05 May 2012

/

返回文章
返回