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中国物理学会期刊
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PAN BI-CAI. TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGENJ. Acta Physica Sinica, 2001, 50(2): 268-272. DOI: 10.7498/aps.50.268
Citation: PAN BI-CAI. TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGENJ. Acta Physica Sinica, 2001, 50(2): 268-272. DOI: 10.7498/aps.50.268
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TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGEN

Acta Phys. Sin., 2001, 50(2): 268-272.
DOI: 10.7498/aps.50.268
CSTR: 32037.14.aps.50.268
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