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中国物理学会期刊

双层石墨烯薄膜体系中的四波混频特性

CSTR: 32037.14.aps.72.20230012

Four-wave mixing properties in bilayer graphene nanosystem

CSTR: 32037.14.aps.72.20230012
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  • 理论研究了双层石墨烯薄膜体系中的四波混频特性. 计算结果表明: 通过调控声子-激子耦合强度、泵浦强度、激子-泵浦场失谐量的大小, 四波混频谱可以在两峰、三峰、四峰、五峰、六峰结构之间切换. 在弱激子-声子耦合情况下(即声子-激子耦合强度g < 激子退相速率Γ2), 四波混频谱中左/右峰的最大强度随泵浦强度的增大先增大后减弱. 在中间耦合(g = Γ2)和强耦合情况下(g >Γ2), 体系中的四波混频谱展现了呈对称性的两峰结构, 两峰的间距等于2g. 当g从1.0 THz增至4.0 THz时, 两峰的峰值都减小到原来的0.4%. 本研究不仅可以用来测量双层石墨烯体系中的声子-激子耦合强度, 而且有利于进一步探究双层石墨烯内部更深层的物理机理.

     

    Graphene thin films are often used to manufacture various optoelectronic nanodevices owing to their advantages such as light weight, small size, high quality factor, and good conductivity. So far, there have been few studies of the four-wave mixing characteristics in a bilayer graphene nanosystem, especially theoretical research. In this work, we study theoretically the four-wave mixing properties in a bilayer graphene nanosystem. Firstly, the analytical formula of the four-wave mixing signal is derived by quantum mechanical method, which is divided into three steps. 1) Total Hamiltonian of the system is written in the rotating wave approximation. 2) By using the Heisenberg equation of motion and the commutation relations between different operators, the corresponding density matrix equations are obtained. 3) To solve these density matrix equations, we make an ansatz and obtain the analytical formula of the four-wave mixing signal. Secondly, we explore the dependence of the four-wave mixing signal on the phonon-exciton coupling strength, pumping intensity and the detuning between the exciton and the pump field. The calculated results show that the lineshape of four-wave mixing spectrum can be switched among two-peaked, three-peaked, four-peaked, five-peaked and six-peaked by adjusting the phonon-exciton coupling strength, the pumping intensity, and the detuning between the exciton and the pump field. In a weak phonon-exciton coupling regime (i.e. phonon-exciton coupling strength g < dephasing rate of exciton Γ2), the intensity of the left peak and right peak of four-wave mixing signal first increase and then decrease with the increase of the pumping intensity \varOmega _\textpu^\text2 . In the intermediate and strong phonon-exciton coupling regime (i.e. g = Γ2 and g > Γ2), the four-wave mixing spectrum exhibits a two-peaked structure. The maximum values of these two peaks increase as \varOmega _\textpu^\text2 increases, and their spacing is equal to 2g. Especially, for a given pumping intensity \varOmega _\textpu^\text2 (= 10 THz2), the maximum value of the peak for g = 4 THz becomes 0.4% of that for g = 1 THz, indicating that the phonon-exciton coupling inhibits the enhancement of the four-wave mixing signal to a certain extent. Our findings can not only offer an efficient way to measure the phonon-exciton coupling strength in the bilayer graphene system, but also help one to further explore the underlying physical mechanism in such a nanosystem.

     

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