Silicon-based field effect transistors have significantly driven the development of the semiconductor industry, but the scaling of feature sizes is approaching physical limits, short-channel effects and thermal dissipation issues have become increasingly severe. Two-dimensional transition metal dichalcogenides (TMDCs) are regarded as a potential alternative channel material for ultimate transistor scaling, owing to their atomically thin thickness and superior properties. Molybdenum disulfide (MoS₂) transistors theoretically exhibit a mobility of up to 420 cm²/(V·s), but their atomically thin thickness makes them susceptible to interface scattering, resulting in experimentally measured room-temperature mobility values below theoretical values. Strain engineering is an effective method to enhance mobility—tensile strain can reduce the bandgap and carrier effective mass of MoS₂, thereby improving mobility. This study proposes a method to regulate the local strain in MoS₂ transistors by modulating the gate dielectric topography, and investigates the resulting effects on the performance of MoS₂ transistors. We utilize an ultrathin porous nanotemplate anodic aluminum oxide (AAO) with via-structures to predeposit 10 nm Au truncated-nanocones on the substrate, followed by a conformal deposition of the gate dielectric through atomic layer deposition (ALD). After transferring MoS₂ film, the truncated-nanocone structures of the gate dielectric topography successfully apply a 0.56% tensile strain to MoS₂. However, the mobility of truncated-nanocone-structure- based MoS₂ transistors does not achieve the desired ideal improvement (only 3-fold increase). Scanning electron microscopy (SEM) and temperature-dependent electrical measurements reveal that while the truncated-nanocone structures introduce tensile strain, they simultaneously induce microscopic wrinkles, which consequently enhance phonon scattering in MoS₂ and reduce the transistor mobility. This study preliminarily elucidates the combined effects of local strain regulation and microscopic wrinkles on the electrical transport mechanism of MoS₂ transistors, offering an important experimental reference for future strain engineering research in two-dimensional semiconductor-based transistors.