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分别对于不同覆盖层厚度的单量子阱结构的样品以及同一覆盖层厚度不同偏压下的量子阱样品进行导纳谱测试，由于覆盖层厚度的不同以及外加偏压的不同引起样品结构的电势分布发生变化，从而用导纳谱测量得到的量子阱的激活能也发生很大变化，通过变偏压的导纳谱测试，可对测试结果做出正确的判断.The activated energy of single quantum well structures obtained by the admittance measurements is varied with different thickness of capping layer and with one sample under different applied bias voltages.The electric potential distribution is the key effect on the energy variation.The correctness of the measured results can be judged by using the admittance measurements under different applied bias voltages
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