MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE

LING SHU-LEN; HUANG CHAANG; SHU BIENG-HUA

doi:10.7498/aps.20.643

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LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA. MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUEJ. Acta Physica Sinica, 1964, 20(7): 643-653. DOI: 10.7498/aps.20.643

Citation:

LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA. MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUEJ. Acta Physica Sinica, 1964, 20(7): 643-653. DOI: 10.7498/aps.20.643

Citation:

LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA. MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUEJ. Acta Physica Sinica, 1964, 20(7): 643-653. DOI: 10.7498/aps.20.643