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中国物理学会期刊
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HUNG GIAN. THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACTJ. Acta Physica Sinica, 1966, 22(4): 385-403. DOI: 10.7498/aps.22.385
Citation: HUNG GIAN. THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACTJ. Acta Physica Sinica, 1966, 22(4): 385-403. DOI: 10.7498/aps.22.385
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THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACT

Acta Phys. Sin., 1966, 22(4): 385-403.
DOI: 10.7498/aps.22.385
CSTR: 32037.14.aps.22.385
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