TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD

GAAS SINGLE CRYSTAL RESEARCH GROUP

doi:10.7498/aps.25.179

GAAS SINGLE CRYSTAL RESEARCH GROUP. TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHODJ. Acta Physica Sinica, 1976, 25(2): 179-180. DOI: 10.7498/aps.25.179

Citation:

GAAS SINGLE CRYSTAL RESEARCH GROUP. TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHODJ. Acta Physica Sinica, 1976, 25(2): 179-180. DOI: 10.7498/aps.25.179

Citation:

GAAS SINGLE CRYSTAL RESEARCH GROUP. TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHODJ. Acta Physica Sinica, 1976, 25(2): 179-180. DOI: 10.7498/aps.25.179