INVESTIGATION ON THE EXPONENTIAL FACTOR OF I<sub>c</sub>-V<sub>BE</sub> CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVEL

CHEN XING-BI; YI MING-GUANG

doi:10.7498/aps.27.10

CHEN XING-BI, YI MING-GUANG. INVESTIGATION ON THE EXPONENTIAL FACTOR OF Ic-VBE CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVELJ. Acta Physica Sinica, 1978, 27(1): 10-21. DOI: 10.7498/aps.27.10

Citation:

CHEN XING-BI, YI MING-GUANG. INVESTIGATION ON THE EXPONENTIAL FACTOR OF Ic-VBE CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVELJ. Acta Physica Sinica, 1978, 27(1): 10-21. DOI: 10.7498/aps.27.10

Citation:

CHEN XING-BI, YI MING-GUANG. INVESTIGATION ON THE EXPONENTIAL FACTOR OF Ic-VBE CHARACTERISTICS OF TRANSISTOR AT LOW INJECTION LEVELJ. Acta Physica Sinica, 1978, 27(1): 10-21. DOI: 10.7498/aps.27.10