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中国物理学会期刊
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FENG XI-QI, LUO BIN-ZHANG. THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATIONJ. Acta Physica Sinica, 1980, 29(1): 1-10. DOI: 10.7498/aps.29.1
Citation: FENG XI-QI, LUO BIN-ZHANG. THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATIONJ. Acta Physica Sinica, 1980, 29(1): 1-10. DOI: 10.7498/aps.29.1
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THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION

Acta Phys. Sin., 1980, 29(1): 1-10.
DOI: 10.7498/aps.29.1
CSTR: 32037.14.aps.29.1
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